All MOSFET. HY030N06C2 Datasheet

 

HY030N06C2 Datasheet and Replacement


   Type Designator: HY030N06C2
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 48 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 65 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 100 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 14 nS
   Cossⓘ - Output Capacitance: 2359 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0028 Ohm
   Package: PPAK5X6-8L
 

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HY030N06C2 Datasheet (PDF)

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HY030N06C2

HY030N06C2 Single N-Channel Enhancement Mode MOSFETFeature Pin Description 65V/100AD D D D D D D DRDS(ON)= 2.4 m(typ.)@VGS = 10VRDS(ON)= 3.7 m(typ.)@VGS = 4.5V 100% Avalanche Tested Reliable and Rugged Halogen- Free Devices AvailableS S S G G S S SPin1 PPAK5*6-8L Applications Hard switched and high frequency circuits Power switching applicati

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 hy030n06c2.pdf pdf_icon

HY030N06C2

HY030N06C2 Single N-Channel Enhancement Mode MOSFETFeature Pin Description 65V/100AD D D D D D D DRDS(ON)= 2.4 m(typ.)@VGS = 10VRDS(ON)= 3.7 m(typ.)@VGS = 4.5V 100% Avalanche Tested Reliable and Rugged Halogen- Free Devices AvailableS S S G G S S SPin1 PPAK5*6-8L Applications Hard switched and high frequency circuits Power switching applicati

Datasheet: HFS13N50 , HP120N04 , HP16N10 , HF16N10 , HP60N75 , HP80N80 , HY029N10P , HY029N10B , RU6888R , HY045N10P , HY045N10B , HY050N08C2 , HY050N08P , HY050N08B , HY0810S , HY0910D , HY0910U .

History: SI1013X | IRFSL3107PBF | AON6206 | HMS21N60F

Keywords - HY030N06C2 MOSFET datasheet

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