HY030N06C2 Datasheet. Specs and Replacement

Type Designator: HY030N06C2

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 48 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 65 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 100 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 14 nS

Cossⓘ - Output Capacitance: 2359 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0028 Ohm

Package: PPAK5X6-8L

HY030N06C2 substitution

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HY030N06C2 datasheet

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HY030N06C2

HY030N06C2 Single N-Channel Enhancement Mode MOSFET Feature Pin Description 65V/100A D D D D D D D D RDS(ON)= 2.4 m (typ.)@VGS = 10V RDS(ON)= 3.7 m (typ.)@VGS = 4.5V 100% Avalanche Tested Reliable and Rugged Halogen- Free Devices Available S S S G G S S S Pin1 PPAK5*6-8L Applications Hard switched and high frequency circuits Power switching applicati... See More ⇒

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 hy030n06c2.pdf pdf_icon

HY030N06C2

HY030N06C2 Single N-Channel Enhancement Mode MOSFET Feature Pin Description 65V/100A D D D D D D D D RDS(ON)= 2.4 m (typ.)@VGS = 10V RDS(ON)= 3.7 m (typ.)@VGS = 4.5V 100% Avalanche Tested Reliable and Rugged Halogen- Free Devices Available S S S G G S S S Pin1 PPAK5*6-8L Applications Hard switched and high frequency circuits Power switching applicati... See More ⇒

Detailed specifications: HFS13N50, HP120N04, HP16N10, HF16N10, HP60N75, HP80N80, HY029N10P, HY029N10B, AO3400A, HY045N10P, HY045N10B, HY050N08C2, HY050N08P, HY050N08B, HY0810S, HY0910D, HY0910U

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