All MOSFET. HY045N10P Datasheet

 

HY045N10P Datasheet and Replacement


   Type Designator: HY045N10P
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 221 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 120 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   trⓘ - Rise Time: 34 nS
   Cossⓘ - Output Capacitance: 2842 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.005 Ohm
   Package: TO220
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HY045N10P Datasheet (PDF)

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HY045N10P

HY045N10P/BN-Channel Enhancement Mode MOSFETFeature Description Pin Description 100V/120ARDS(ON)= 4.2m(typ.)@VGS = 10V 100% Avalanche Tested Reliable and Rugged Lead Free and Green Devices Available(RoHS Compliant)TO-220FB-3L TO-263-2LApplications Switch application DC/DC ConverterN-Channel MOSFETOrdering and Marking InformationPackage CodeP:T

Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , AON7408 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

History: SVS20N60KD2 | IPD600N25N3G | AP30T10GH | IXTB30N100L | WSD3042DN56 | 2SK846 | MTA25N02J3

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