All MOSFET. HY045N10B Datasheet

 

HY045N10B Datasheet and Replacement


   Type Designator: HY045N10B
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 221 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 120 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 34 nS
   Cossⓘ - Output Capacitance: 2842 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.005 Ohm
   Package: TO263
 

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HY045N10B Datasheet (PDF)

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HY045N10B

HY045N10P/BN-Channel Enhancement Mode MOSFETFeature Description Pin Description 100V/120ARDS(ON)= 4.2m(typ.)@VGS = 10V 100% Avalanche Tested Reliable and Rugged Lead Free and Green Devices Available(RoHS Compliant)TO-220FB-3L TO-263-2LApplications Switch application DC/DC ConverterN-Channel MOSFETOrdering and Marking InformationPackage CodeP:T

Datasheet: HP16N10 , HF16N10 , HP60N75 , HP80N80 , HY029N10P , HY029N10B , HY030N06C2 , HY045N10P , IRF1405 , HY050N08C2 , HY050N08P , HY050N08B , HY0810S , HY0910D , HY0910U , HY0910V , HY0C20C .

History: IXTM6N80 | SHD219720 | CEF03N8 | SHD220212

Keywords - HY045N10B MOSFET datasheet

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