All MOSFET. HY045N10B Datasheet

 

HY045N10B Datasheet and Replacement


   Type Designator: HY045N10B
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 221 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 120 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   trⓘ - Rise Time: 34 nS
   Cossⓘ - Output Capacitance: 2842 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.005 Ohm
   Package: TO263
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HY045N10B Datasheet (PDF)

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HY045N10B

HY045N10P/BN-Channel Enhancement Mode MOSFETFeature Description Pin Description 100V/120ARDS(ON)= 4.2m(typ.)@VGS = 10V 100% Avalanche Tested Reliable and Rugged Lead Free and Green Devices Available(RoHS Compliant)TO-220FB-3L TO-263-2LApplications Switch application DC/DC ConverterN-Channel MOSFETOrdering and Marking InformationPackage CodeP:T

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: 20N03L-TO252 | 2N6762JTXV

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