All MOSFET. HY050N08C2 Datasheet

 

HY050N08C2 MOSFET. Datasheet pdf. Equivalent


   Type Designator: HY050N08C2
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 69.4 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 80 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 80 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 54 nC
   trⓘ - Rise Time: 22 nS
   Cossⓘ - Output Capacitance: 1850 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0058 Ohm
   Package: PPAK5X6-8L

 HY050N08C2 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

HY050N08C2 Datasheet (PDF)

 ..1. Size:1288K  hymexa
 hy050n08c2.pdf

HY050N08C2 HY050N08C2

HY050N08C2Single N-Channel Enhancement Mode MOSFETFeature Pin DescriptionS S S GD D D D 80V/80ARDS(ON)= 5.2m(typ.)@VGS = 10V 100% Avalanche Tested Reliable and Rugged Halogen- Free Devices Available(RoHS Compliant)S S S G D D D DPPAK5*6-8LPin1Applications High Frequency Point-of-Load Synchronous Buck Converter Power Tool Application Netwo

 6.1. Size:883K  hymexa
 hy050n08p hy050n08b.pdf

HY050N08C2 HY050N08C2

HY050N08P/BN-Channel Enhancement Mode MOSFET Feature Description Pin Description 85V/105ARDS(ON)= 4.7m(typ.)@VGS = 10V 100% Avalanche TestedSDG Reliable and RuggedSD Lead Free and Green Devices Available G(RoHS Compliant) TO-220FB-3L TO-263-2LApplications Switch application DC/DC ConverterOrdering and Marking Information Package Code P B P:TO-220FB-

Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 2SK3568 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

History: SSSF11NS65UF | 2SK1462 | TK9J90E | HRLD250N10K | IPA60R250CP | TK80S04K3L

 

 
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