HY050N08C2 Datasheet. Specs and Replacement

Type Designator: HY050N08C2

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 69.4 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 80 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 80 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 22 nS

Cossⓘ - Output Capacitance: 1850 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0058 Ohm

Package: PPAK5X6-8L

HY050N08C2 substitution

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HY050N08C2 datasheet

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HY050N08C2

HY050N08C2 Single N-Channel Enhancement Mode MOSFET Feature Pin Description S S S G D D D D 80V/80A RDS(ON)= 5.2m (typ.)@VGS = 10V 100% Avalanche Tested Reliable and Rugged Halogen- Free Devices Available (RoHS Compliant) S S S G D D D D PPAK5*6-8L Pin1 Applications High Frequency Point-of-Load Synchronous Buck Converter Power Tool Application Netwo... See More ⇒

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HY050N08C2

HY050N08P/B N-Channel Enhancement Mode MOSFET Feature Description Pin Description 85V/105A RDS(ON)= 4.7m (typ.)@VGS = 10V 100% Avalanche Tested S D G Reliable and Rugged S D Lead Free and Green Devices Available G (RoHS Compliant) TO-220FB-3L TO-263-2L Applications Switch application DC/DC Converter Ordering and Marking Information Package Code P B P TO-220FB-... See More ⇒

Detailed specifications: HF16N10, HP60N75, HP80N80, HY029N10P, HY029N10B, HY030N06C2, HY045N10P, HY045N10B, IRF1405, HY050N08P, HY050N08B, HY0810S, HY0910D, HY0910U, HY0910V, HY0C20C, HY10P10D

Keywords - HY050N08C2 MOSFET specs

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