All MOSFET. HY050N08B Datasheet

 

HY050N08B Datasheet and Replacement


   Type Designator: HY050N08B
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 166 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 85 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 105 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 30 nS
   Cossⓘ - Output Capacitance: 1649 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0055 Ohm
   Package: TO263
 

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HY050N08B Datasheet (PDF)

 ..1. Size:883K  hymexa
 hy050n08p hy050n08b.pdf pdf_icon

HY050N08B

HY050N08P/BN-Channel Enhancement Mode MOSFET Feature Description Pin Description 85V/105ARDS(ON)= 4.7m(typ.)@VGS = 10V 100% Avalanche TestedSDG Reliable and RuggedSD Lead Free and Green Devices Available G(RoHS Compliant) TO-220FB-3L TO-263-2LApplications Switch application DC/DC ConverterOrdering and Marking Information Package Code P B P:TO-220FB-

 6.1. Size:1288K  hymexa
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HY050N08B

HY050N08C2Single N-Channel Enhancement Mode MOSFETFeature Pin DescriptionS S S GD D D D 80V/80ARDS(ON)= 5.2m(typ.)@VGS = 10V 100% Avalanche Tested Reliable and Rugged Halogen- Free Devices Available(RoHS Compliant)S S S G D D D DPPAK5*6-8LPin1Applications High Frequency Point-of-Load Synchronous Buck Converter Power Tool Application Netwo

Datasheet: HP80N80 , HY029N10P , HY029N10B , HY030N06C2 , HY045N10P , HY045N10B , HY050N08C2 , HY050N08P , RU7088R , HY0810S , HY0910D , HY0910U , HY0910V , HY0C20C , HY10P10D , HY10P10U , HY1103S .

History: 2SK1332 | 2SK1406 | RF4E110BN | 2N7002ZT | 2N6802U | SWSI6N70DA

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