All MOSFET. HY0C20C Datasheet

 

HY0C20C Datasheet and Replacement


   Type Designator: HY0C20C
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.56 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V
   |Id| ⓘ - Maximum Drain Current: 12 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 22 nS
   Cossⓘ - Output Capacitance: 180 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.011 Ohm
   Package: DFN6L
 

 HY0C20C substitution

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HY0C20C Datasheet (PDF)

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HY0C20C

HY0C20CDual N-Channel Enhancement Mode MOSFETFeatures Pin Description 20V/ 12AG2 S2 S2RDS(ON)= 9 m (typ.) @ VGS=4.5VRDS(ON)= 11.5 m (typ.) @ VGS=2.5VD1/D2 High Cell Desity for low Rds(on) ESD Rating:2000V HBMHalogen Device AvailableG1 S1 S1DFN6L(0203)Bottom Drain ContactG1 3 4 G2Applications2 5S1 S2 Battery pack protectionS1 1 6 S2 Power too

Datasheet: HY045N10B , HY050N08C2 , HY050N08P , HY050N08B , HY0810S , HY0910D , HY0910U , HY0910V , 8N60 , HY10P10D , HY10P10U , HY1103S , HY1106S , HY1203S , HY1210D , HY1210U , HY1210V .

History: IRFSL3107PBF | AON6206

Keywords - HY0C20C MOSFET datasheet

 HY0C20C cross reference
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