HY0C20C Datasheet. Specs and Replacement

Type Designator: HY0C20C

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.56 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V

|Id| ⓘ - Maximum Drain Current: 12 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 22 nS

Cossⓘ - Output Capacitance: 180 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.011 Ohm

Package: DFN6L

HY0C20C substitution

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HY0C20C datasheet

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HY0C20C

HY0C20C Dual N-Channel Enhancement Mode MOSFET Features Pin Description 20V/ 12A G2 S2 S2 RDS(ON)= 9 m (typ.) @ VGS=4.5V RDS(ON)= 11.5 m (typ.) @ VGS=2.5V D1/D2 High Cell Desity for low Rds(on) ESD Rating 2000V HBM Halogen Device Available G1 S1 S1 DFN6L(0203) Bottom Drain Contact G1 3 4 G2 Applications 2 5 S1 S2 Battery pack protection S1 1 6 S2 Power too... See More ⇒

Detailed specifications: HY045N10B, HY050N08C2, HY050N08P, HY050N08B, HY0810S, HY0910D, HY0910U, HY0910V, IRFB7545, HY10P10D, HY10P10U, HY1103S, HY1106S, HY1203S, HY1210D, HY1210U, HY1210V

Keywords - HY0C20C MOSFET specs

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.