All MOSFET. HY10P10D Datasheet

 

HY10P10D Datasheet and Replacement


   Type Designator: HY10P10D
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 31.3 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 10 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 25 nS
   Cossⓘ - Output Capacitance: 340 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.225 Ohm
   Package: TO252
 

 HY10P10D substitution

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HY10P10D Datasheet (PDF)

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 hy10p10d hy10p10u.pdf pdf_icon

HY10P10D

HY10P10D/UP-Channel Enhancement Mode MOSFETFeature Pin Description -100V/-10ARDS(ON)= 187m(typ.)@VGS = -10VRDS(ON)= 208m(typ.)@VGS = -4.5V 100% Avalanche TestedS Reliable and RuggedDG Halogen Free and Green Devices AvailableSD(RoHS Compliant)GTO-252-2L TO-251-3LApplications Power Management for Inverter SystemsP-Channel MOSFETOrdering a

Datasheet: HY050N08C2 , HY050N08P , HY050N08B , HY0810S , HY0910D , HY0910U , HY0910V , HY0C20C , EMB04N03H , HY10P10U , HY1103S , HY1106S , HY1203S , HY1210D , HY1210U , HY1210V , HY12P03C2 .

History: PHB66NQ03LT | IRF7739L1 | DMP3020LSS

Keywords - HY10P10D MOSFET datasheet

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