HY1203S Datasheet. Specs and Replacement

Type Designator: HY1203S

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2.5 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 12 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 9 nS

Cossⓘ - Output Capacitance: 350 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0075 Ohm

Package: SOP8

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HY1203S datasheet

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HY1203S

HY1203S N-Channel Enhancement Mode MOSFET Feature Pin Description 30V/12A D D RDS(ON) = 7.5 m (typ.)@VGS = 10V D D RDS(ON) = 9.0 m (typ.)@VGS = 4.5V Avalanche Rated S S S Reliable and Rugged G Lead Free Devices Available SOP-8 Applications Power Management in DC/DC Converter N-Channel MOSFET Switching application Ordering and Marking In... See More ⇒

Detailed specifications: HY0910D, HY0910U, HY0910V, HY0C20C, HY10P10D, HY10P10U, HY1103S, HY1106S, MMIS60R580P, HY1210D, HY1210U, HY1210V, HY12P03C2, HY12P03S, HY1303C, HY1310D, HY1310U

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