All MOSFET. HY1203S Datasheet

 

HY1203S Datasheet and Replacement


   Type Designator: HY1203S
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 2.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 12 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 9 nS
   Cossⓘ - Output Capacitance: 350 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0075 Ohm
   Package: SOP8
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HY1203S Datasheet (PDF)

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HY1203S

HY1203S N-Channel Enhancement Mode MOSFET Feature Pin Description 30V/12A DDRDS(ON) = 7.5 m(typ.)@VGS = 10V DDRDS(ON) = 9.0 m(typ.)@VGS = 4.5V Avalanche Rated SSS Reliable and Rugged G Lead Free Devices Available SOP-8Applications Power Management in DC/DC Converter N-Channel MOSFET Switching application Ordering and Marking In

Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , AON7408 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

History: BUZ110S | MDZ1N60UMH | STK4N25 | IXTB30N100L | WSD3042DN56 | HM730F | 7NM70G-TF3T-T

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