All MOSFET. HY1203S Datasheet

 

HY1203S Datasheet and Replacement


   Type Designator: HY1203S
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 2.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 12 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 9 nS
   Cossⓘ - Output Capacitance: 350 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0075 Ohm
   Package: SOP8
 

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HY1203S Datasheet (PDF)

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HY1203S

HY1203S N-Channel Enhancement Mode MOSFET Feature Pin Description 30V/12A DDRDS(ON) = 7.5 m(typ.)@VGS = 10V DDRDS(ON) = 9.0 m(typ.)@VGS = 4.5V Avalanche Rated SSS Reliable and Rugged G Lead Free Devices Available SOP-8Applications Power Management in DC/DC Converter N-Channel MOSFET Switching application Ordering and Marking In

Datasheet: HY0910D , HY0910U , HY0910V , HY0C20C , HY10P10D , HY10P10U , HY1103S , HY1106S , 2N7002 , HY1210D , HY1210U , HY1210V , HY12P03C2 , HY12P03S , HY1303C , HY1310D , HY1310U .

History: SI1013X | IRFSL3107PBF | AON6206 | HMS21N60F

Keywords - HY1203S MOSFET datasheet

 HY1203S cross reference
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