HY1210D Datasheet. Specs and Replacement

Type Designator: HY1210D

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 50 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 26 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 8 nS

Cossⓘ - Output Capacitance: 38 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.036 Ohm

Package: TO252

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HY1210D datasheet

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HY1210D

HY1210D/U/V N-Channel Enhancement Mode MOSFET Feature Pin Description 100V/26A RDS(ON)= 32m (typ.)@VGS = 10V RDS(ON) = 34m (typ.)@VGS = 4.5V 100% Avalanche Tested S S D Reliable and Rugged D G G Halogen Free and Green Devices Available S D (RoHS Compliant) G TO-252-2L TO-251-3L TO-251-3S Applications Power Management for Inverter Systems N-Channel MO... See More ⇒

Detailed specifications: HY0910U, HY0910V, HY0C20C, HY10P10D, HY10P10U, HY1103S, HY1106S, HY1203S, AOD4184A, HY1210U, HY1210V, HY12P03C2, HY12P03S, HY1303C, HY1310D, HY1310U, HY1310V

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