All MOSFET. HY1210D Datasheet

 

HY1210D MOSFET. Datasheet pdf. Equivalent


   Type Designator: HY1210D
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 50 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
   |Id|ⓘ - Maximum Drain Current: 26 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 72 nC
   trⓘ - Rise Time: 8 nS
   Cossⓘ - Output Capacitance: 38 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.036 Ohm
   Package: TO252

 HY1210D Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

HY1210D Datasheet (PDF)

 ..1. Size:2410K  hymexa
 hy1210d hy1210u hy1210v.pdf

HY1210D HY1210D

HY1210D/U/VN-Channel Enhancement Mode MOSFETFeaturePin Description 100V/26ARDS(ON)= 32m(typ.)@VGS = 10VRDS(ON) = 34m(typ.)@VGS = 4.5V 100% Avalanche TestedSSD Reliable and RuggedDGG Halogen Free and Green Devices AvailableSD(RoHS Compliant)GTO-252-2L TO-251-3L TO-251-3SApplications Power Management for Inverter SystemsN-Channel MO

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
Back to Top