HY1210D Datasheet and Replacement
Type Designator: HY1210D
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 50 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 26 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 8 nS
Cossⓘ - Output Capacitance: 38 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.036 Ohm
Package: TO252
HY1210D substitution
HY1210D Datasheet (PDF)
hy1210d hy1210u hy1210v.pdf
HY1210D/U/VN-Channel Enhancement Mode MOSFETFeaturePin Description 100V/26ARDS(ON)= 32m(typ.)@VGS = 10VRDS(ON) = 34m(typ.)@VGS = 4.5V 100% Avalanche TestedSSD Reliable and RuggedDGG Halogen Free and Green Devices AvailableSD(RoHS Compliant)GTO-252-2L TO-251-3L TO-251-3SApplications Power Management for Inverter SystemsN-Channel MO
Datasheet: HY0910U , HY0910V , HY0C20C , HY10P10D , HY10P10U , HY1103S , HY1106S , HY1203S , AOD4184A , HY1210U , HY1210V , HY12P03C2 , HY12P03S , HY1303C , HY1310D , HY1310U , HY1310V .
History: IRF7306Q | SIRA72DP | IRF7750G | SSM6J409TU | IRF7324 | STL42P4LLF6 | SSM6J410TU
Keywords - HY1210D MOSFET datasheet
HY1210D cross reference
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Can't find your MOSFET? Learn how to find a substitute transistor by analyzing voltage, current and package compatibility
History: IRF7306Q | SIRA72DP | IRF7750G | SSM6J409TU | IRF7324 | STL42P4LLF6 | SSM6J410TU
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