All MOSFET. HY1210V Datasheet

 

HY1210V Datasheet and Replacement


   Type Designator: HY1210V
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 50 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 26 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 8 nS
   Cossⓘ - Output Capacitance: 38 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.036 Ohm
   Package: TO251
 

 HY1210V substitution

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HY1210V Datasheet (PDF)

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HY1210V

HY1210D/U/VN-Channel Enhancement Mode MOSFETFeaturePin Description 100V/26ARDS(ON)= 32m(typ.)@VGS = 10VRDS(ON) = 34m(typ.)@VGS = 4.5V 100% Avalanche TestedSSD Reliable and RuggedDGG Halogen Free and Green Devices AvailableSD(RoHS Compliant)GTO-252-2L TO-251-3L TO-251-3SApplications Power Management for Inverter SystemsN-Channel MO

Datasheet: HY0C20C , HY10P10D , HY10P10U , HY1103S , HY1106S , HY1203S , HY1210D , HY1210U , AO4468 , HY12P03C2 , HY12P03S , HY1303C , HY1310D , HY1310U , HY1310V , HY1403D , HY1403U .

History: AM4545C | SWP046R08E9T | PMPB10EN | NCE50NF220K | FXN0405C | AM2340N | MPSW65M046CFD

Keywords - HY1210V MOSFET datasheet

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