HY1303C Datasheet. Specs and Replacement

Type Designator: HY1303C

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 3.1 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 30 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 13 nS

Cossⓘ - Output Capacitance: 253 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0052 Ohm

Package: DFN3X3-8L

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HY1303C datasheet

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HY1303C

HY1303C Single N-Channel Enhancement Mode MOSFET Features Pin Description D D D D 30V/ 30A RDS(ON)= 4.2 m (typ.) @ VGS=10 V RDS(ON)= 5.5 m (typ.) @ VGS 4.5V High Cell Desity for low Rds(on) Halogen Device Available G S S S Pin1 DFN3*3-8L Applications Battery pack protection Power tool Ordering and Marking Information Single N-Channel MOSFET Pa... See More ⇒

Detailed specifications: HY1103S, HY1106S, HY1203S, HY1210D, HY1210U, HY1210V, HY12P03C2, HY12P03S, IRF730, HY1310D, HY1310U, HY1310V, HY1403D, HY1403U, HY1403V, HY1503C1, HY1506C2

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