All MOSFET. HY1303C Datasheet

 

HY1303C MOSFET. Datasheet pdf. Equivalent


   Type Designator: HY1303C
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 3.1 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
   |Id|ⓘ - Maximum Drain Current: 30 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 46 nC
   trⓘ - Rise Time: 13 nS
   Cossⓘ - Output Capacitance: 253 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0052 Ohm
   Package: DFN3X3-8L

 HY1303C Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

HY1303C Datasheet (PDF)

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 hy1303c.pdf

HY1303C HY1303C

HY1303CSingle N-Channel Enhancement Mode MOSFETFeaturesPin DescriptionD D D D 30V/ 30ARDS(ON)= 4.2 m(typ.) @ VGS=10 VRDS(ON)= 5.5 m(typ.) @ VGS 4.5V High Cell Desity for low Rds(on) Halogen Device AvailableG S S S Pin1 DFN3*3-8L Applications Battery pack protectionPower toolOrdering and Marking InformationSingle N-Channel MOSFETPa

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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