All MOSFET. HY1303C Datasheet

 

HY1303C Datasheet and Replacement


   Type Designator: HY1303C
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 3.1 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 30 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 13 nS
   Cossⓘ - Output Capacitance: 253 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0052 Ohm
   Package: DFN3X3-8L
 

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HY1303C Datasheet (PDF)

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HY1303C

HY1303CSingle N-Channel Enhancement Mode MOSFETFeaturesPin DescriptionD D D D 30V/ 30ARDS(ON)= 4.2 m(typ.) @ VGS=10 VRDS(ON)= 5.5 m(typ.) @ VGS 4.5V High Cell Desity for low Rds(on) Halogen Device AvailableG S S S Pin1 DFN3*3-8L Applications Battery pack protectionPower toolOrdering and Marking InformationSingle N-Channel MOSFETPa

Datasheet: HY1103S , HY1106S , HY1203S , HY1210D , HY1210U , HY1210V , HY12P03C2 , HY12P03S , IRF730 , HY1310D , HY1310U , HY1310V , HY1403D , HY1403U , HY1403V , HY1503C1 , HY1506C2 .

History: IRF7314 | IRF7342

Keywords - HY1303C MOSFET datasheet

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