HY1403V Datasheet and Replacement
Type Designator: HY1403V
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 30 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 42 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 13 nS
Cossⓘ - Output Capacitance: 251 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.011 Ohm
Package: TO251
HY1403V substitution
HY1403V Datasheet (PDF)
hy1403d hy1403u hy1403v.pdf

HY1403D/U/VN-Channel Enhancement Mode MOSFETFeaturesPin Description 30V/42ARDS(ON) = 10 m(typ.) @VGS =- 10VRDS(ON) = 14 m(typ.) @VGS = -4.5VSSD SD S 100% Avalanche TestedG DG D GG Reliable and RuggedSSDD G Halogen Free and Green Devices Available(RoHS Compliant)TO-252-2L TO-251-3L TO-251-3SApplications Switching Application Power Man
Datasheet: HY12P03C2 , HY12P03S , HY1303C , HY1310D , HY1310U , HY1310V , HY1403D , HY1403U , IRF540 , HY1503C1 , HY1506C2 , HY15P03C2 , HY15P03S , HY1603D , HY1603U , HY1603S , HY1603P .
History: IXTL2x240N055T | TSM3548DCX6 | BUK9606-40B | SVSP11N65FJHD2 | 2SK2525-01 | SIHFBC30A | SM6107PSU
Keywords - HY1403V MOSFET datasheet
HY1403V cross reference
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History: IXTL2x240N055T | TSM3548DCX6 | BUK9606-40B | SVSP11N65FJHD2 | 2SK2525-01 | SIHFBC30A | SM6107PSU



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