SSS1N60A Datasheet and Replacement
Type Designator: SSS1N60A
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 17 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 0.7 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 13 nS
Cossⓘ - Output Capacitance: 20 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 12 Ohm
Package: TO220F
SSS1N60A substitution
SSS1N60A Datasheet (PDF)
sss1n60.pdf
Shenzhen Tuofeng Semiconductor Technology Co., Ltd SSS1N60SSS1N60 600V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 1.0A, 600V, RDS(on) = 8.5 @VGS = 10 Vtransistors are produced using proprietary, Low gate charge ( typical 5.9 nC)planar, DMOS technology. Low Crss ( typical 3.6 pF)This advanced technology has been
Datasheet: SSR1N50 , SSR1N50A , SSR1N60A , SSR2N60A , SSR3055A , SSR3055LA , SSS10N60A , SSS1N50A , IRFP260N , SSS2N60A , SSS2N80A , SSS2N90A , SSS3N80A , SSS3N90A , SSS4N55 , SSS4N60 , SSS4N60AS .
History: IRFM214A
Keywords - SSS1N60A MOSFET datasheet
SSS1N60A cross reference
SSS1N60A equivalent finder
SSS1N60A lookup
SSS1N60A substitution
SSS1N60A replacement
History: IRFM214A
LIST
Last Update
MOSFET: SLI13N50C | SLH95R130GTZ | SLH65R180E7C | SLH60R075GTDI | SLH60R043E7D | SLH10RN20T | SLF95R760GTZ | SLF16N65S | SLF12N65SV | SLF10N65SV | SLE65R1K2E7 | SLD95R3K2GTZ | SLD90N03TB | SLD90N02TB | SLD8N65SV | SLD8N50UD
Popular searches
2sc680 | 2sd234 | 2sc9014 | a970 transistor | 2sb560 | tip31c transistor equivalent | 2sc1815 datasheet | mj15015