SSS1N60A Specs and Replacement
Type Designator: SSS1N60A
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 17 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 0.7 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 13 nS
Cossⓘ - Output Capacitance: 20 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 12 Ohm
Package: TO220F
SSS1N60A substitution
- MOSFET ⓘ Cross-Reference Search
SSS1N60A datasheet
sss1n60.pdf
Shenzhen Tuofeng Semiconductor Technology Co., Ltd SSS1N60 SSS1N60 600V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 1.0A, 600V, RDS(on) = 8.5 @VGS = 10 V transistors are produced using proprietary, Low gate charge ( typical 5.9 nC) planar, DMOS technology. Low Crss ( typical 3.6 pF) This advanced technology has been... See More ⇒
Detailed specifications: SSR1N50 , SSR1N50A , SSR1N60A , SSR2N60A , SSR3055A , SSR3055LA , SSS10N60A , SSS1N50A , IRLZ44N , SSS2N60A , SSS2N80A , SSS2N90A , SSS3N80A , SSS3N90A , SSS4N55 , SSS4N60 , SSS4N60AS .
Keywords - SSS1N60A MOSFET specs
SSS1N60A cross reference
SSS1N60A equivalent finder
SSS1N60A pdf lookup
SSS1N60A substitution
SSS1N60A replacement
Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.
