HY1710M MOSFET. Datasheet pdf. Equivalent
Type Designator: HY1710M
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 150 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 70 A
Tjⓘ - Maximum Junction Temperature: 175 °C
Qgⓘ - Total Gate Charge: 94 nC
trⓘ - Rise Time: 23 nS
Cossⓘ - Output Capacitance: 273 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.018 Ohm
Package: TO220
HY1710M Transistor Equivalent Substitute - MOSFET Cross-Reference Search
HY1710M Datasheet (PDF)
..1. Size:1249K hymexa
hy1710p hy1710m hy1710b hy1710mf hy1710ps hy1710pm.pdf
hy1710p hy1710m hy1710b hy1710mf hy1710ps hy1710pm.pdf
HY1710P/M/B/MF/PS/PMN-Channel Enhancement Mode MOSFETFeature Pin Description 100V/70ARDS(ON)= 15m(typ.)@VGS = 10VSDG 100% Avalanche Tested SDG Reliable and RuggedSDG Lead- Free Devices AvailableTO-263-2LTO-220FB-3LTO-220FB-3S(RoHS Compliant)Applications SD Switching applicationGSSD Power management for inverter systems DGGTO-220M
Datasheet: FQT7N10L , FDP083N15A , FQU10N20C , FDP075N15A , FQU11P06 , FQU12N20 , FDPF085N10A , FQU13N06L , IRF540N , FDB86102LZ , FQU17P06 , FQU1N60C , FDP085N10A , FQU20N06L , FQU2N100 , FQU2N60C , FDMC8030 .
