HY1710M Datasheet. Specs and Replacement
Type Designator: HY1710M
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 150 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
|Id| ⓘ - Maximum Drain Current: 70 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 23 nS
Cossⓘ - Output Capacitance: 273 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.018 Ohm
Package: TO220
HY1710M substitution
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HY1710M datasheet
hy1710p hy1710m hy1710b hy1710mf hy1710ps hy1710pm.pdf
HY1710P/M/B/MF/PS/PM N-Channel Enhancement Mode MOSFET Feature Pin Description 100V/70A RDS(ON)= 15m (typ.)@VGS = 10V S D G 100% Avalanche Tested S D G Reliable and Rugged S D G Lead- Free Devices Available TO-263-2L TO-220FB-3L TO-220FB-3S (RoHS Compliant) Applications S D Switching application G S S D Power management for inverter systems D G G TO-220M... See More ⇒
Detailed specifications: HY1607U, HY1607V, HY1607M, HY1607B, HY1607MF, HY1607PS, HY1607PM, HY1710P, IRF630, HY1710B, HY1710MF, HY1710PS, HY1710PM, HY1720P, HY1720B, HY1803C2, HY1804D
Keywords - HY1710M MOSFET specs
HY1710M cross reference
HY1710M equivalent finder
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HY1710M substitution
HY1710M replacement
Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.
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