HY1720B Datasheet. Specs and Replacement

Type Designator: HY1720B

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 263 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 64 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 20 nS

Cossⓘ - Output Capacitance: 338 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.032 Ohm

Package: TO263

HY1720B substitution

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HY1720B datasheet

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HY1720B

HY1720P/B N-Channel Enhancement Mode MOSFET Feature Pin Description 200V/64A RDS(ON)=27m (typ.)@VGS = 10V 100% Avalanche Tested Reliable and Rugged Lead-Free and Green Devices Available (RoHS Compliant) TO-220FB-3L TO-263-2L Applications Power Switching application Uninterruptible Power Supply N-Channel MOSFET Ordering and Marking Information Package Code... See More ⇒

Detailed specifications: HY1607PM, HY1710P, HY1710M, HY1710B, HY1710MF, HY1710PS, HY1710PM, HY1720P, IRF9540N, HY1803C2, HY1804D, HY1804V, HY1804P, HY1804B, HY1904C2, HY1904D, HY1904U

Keywords - HY1720B MOSFET specs

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