All MOSFET. HY1720B Datasheet

 

HY1720B Datasheet and Replacement


   Type Designator: HY1720B
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 263 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 64 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 20 nS
   Cossⓘ - Output Capacitance: 338 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.032 Ohm
   Package: TO263
 

 HY1720B substitution

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HY1720B Datasheet (PDF)

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HY1720B

HY1720P/BN-Channel Enhancement Mode MOSFETFeature Pin Description 200V/64ARDS(ON)=27m(typ.)@VGS = 10V 100% Avalanche Tested Reliable and Rugged Lead-Free and Green Devices Available(RoHS Compliant)TO-220FB-3L TO-263-2LApplications Power Switching application Uninterruptible Power SupplyN-Channel MOSFETOrdering and Marking InformationPackage Code

Datasheet: HY1607PM , HY1710P , HY1710M , HY1710B , HY1710MF , HY1710PS , HY1710PM , HY1720P , IRF9540N , HY1803C2 , HY1804D , HY1804V , HY1804P , HY1804B , HY1904C2 , HY1904D , HY1904U .

History: AP18N50W | 2SJ197

Keywords - HY1720B MOSFET datasheet

 HY1720B cross reference
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