HY1915P MOSFET. Datasheet pdf. Equivalent
Type Designator: HY1915P
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 263 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 150 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5 V
|Id|ⓘ - Maximum Drain Current: 85 A
Tjⓘ - Maximum Junction Temperature: 175 °C
Qgⓘ - Total Gate Charge: 103 nC
trⓘ - Rise Time: 30 nS
Cossⓘ - Output Capacitance: 384 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.018 Ohm
Package: TO220
HY1915P Transistor Equivalent Substitute - MOSFET Cross-Reference Search
HY1915P Datasheet (PDF)
..1. Size:1684K hymexa
hy1915p hy1915b.pdf
hy1915p hy1915b.pdf
HY1915P/BN-Channel Enhancement Mode MOSFETFeature Pin Description 150V/85ARDS(ON)=15m(typ.)@VGS = 10V 100% Avalanche Tested Reliable and Rugged Lead-Free and Green Devices Available(RoHS Compliant)TO-220FB-3L TO-263-2LApplications Power Switching application Uninterruptible Power SupplyMotor controlN-Channel MOSFETOrdering and Marking Infor
Datasheet: AM3401 , AM3402N , AM3403P , AM3405P , AM3406 , AM3406N , AM3407 , AM3407PE , 7N60 , AM3412N , AM3413 , AM3413P , AM3415 , AM3415A , AM3416 , AM3422 , AM3423P .
