All MOSFET. HY1915P Datasheet

 

HY1915P Datasheet and Replacement


   Type Designator: HY1915P
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 263 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 150 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 85 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   trⓘ - Rise Time: 30 nS
   Cossⓘ - Output Capacitance: 384 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.018 Ohm
   Package: TO220
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HY1915P Datasheet (PDF)

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HY1915P

HY1915P/BN-Channel Enhancement Mode MOSFETFeature Pin Description 150V/85ARDS(ON)=15m(typ.)@VGS = 10V 100% Avalanche Tested Reliable and Rugged Lead-Free and Green Devices Available(RoHS Compliant)TO-220FB-3L TO-263-2LApplications Power Switching application Uninterruptible Power SupplyMotor controlN-Channel MOSFETOrdering and Marking Infor

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: TK2P60D | IRFBG20

Keywords - HY1915P MOSFET datasheet

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