HY1915P Specs and Replacement
Type Designator: HY1915P
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 263 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 150 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 85 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 30 nS
Cossⓘ - Output Capacitance: 384 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.018 Ohm
Package: TO220
HY1915P substitution
- MOSFET ⓘ Cross-Reference Search
HY1915P datasheet
hy1915p hy1915b.pdf
HY1915P/B N-Channel Enhancement Mode MOSFET Feature Pin Description 150V/85A RDS(ON)=15m (typ.)@VGS = 10V 100% Avalanche Tested Reliable and Rugged Lead-Free and Green Devices Available (RoHS Compliant) TO-220FB-3L TO-263-2L Applications Power Switching application Uninterruptible Power Supply Motor control N-Channel MOSFET Ordering and Marking Infor... See More ⇒
Detailed specifications: HY1908U , HY1908S , HY1908P , HY1908M , HY1908B , HY1908MF , HY1908PS , HY1908PM , NCEP15T14 , HY1915B , HY1920P , HY1920B , HY1920W , HY19P03D , HY19P03U , HY19P03V , HY19P03P .
Keywords - HY1915P MOSFET specs
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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.
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