HY1920P Datasheet. Specs and Replacement
Type Designator: HY1920P 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 375 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 90 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 45 nS
Cossⓘ - Output Capacitance: 392 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.024 Ohm
Package: TO220
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HY1920P substitution
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HY1920P datasheet
Detailed specifications: HY1908P, HY1908M, HY1908B, HY1908MF, HY1908PS, HY1908PM, HY1915P, HY1915B, AON7410, HY1920B, HY1920W, HY19P03D, HY19P03U, HY19P03V, HY19P03P, HY19P03B, HY3003D
Keywords - HY1920P MOSFET specs
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