All MOSFET. HY1920B Datasheet

 

HY1920B Datasheet and Replacement


   Type Designator: HY1920B
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 375 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id| ⓘ - Maximum Drain Current: 90 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   Qg ⓘ - Total Gate Charge: 130.4 nC
   tr ⓘ - Rise Time: 45 nS
   Cossⓘ - Output Capacitance: 392 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.024 Ohm
   Package: TO263
 

 HY1920B substitution

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HY1920B Datasheet (PDF)

 ..1. Size:899K  hymexa
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HY1920B

SDG SDG TO-220FB-3L TO-263-2L

 8.1. Size:1617K  hymexa
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HY1920B

SDG

Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , 7N65 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

History: 2SK3562 | HY1908PM

Keywords - HY1920B MOSFET datasheet

 HY1920B cross reference
 HY1920B equivalent finder
 HY1920B lookup
 HY1920B substitution
 HY1920B replacement

 

 
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