HY1920B Datasheet and Replacement
Type Designator: HY1920B
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 375 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id|ⓘ - Maximum Drain Current: 90 A
Tjⓘ - Maximum Junction Temperature: 175 °C
trⓘ - Rise Time: 45 nS
Cossⓘ - Output Capacitance: 392 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.024 Ohm
Package: TO263
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HY1920B Datasheet (PDF)
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
History: TK2P60D | 3UT40 | IRFBG20
Keywords - HY1920B MOSFET datasheet
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History: TK2P60D | 3UT40 | IRFBG20
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