HY1920B Datasheet and Replacement
Type Designator: HY1920B
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 375 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 90 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
tr ⓘ - Rise Time: 45 nS
Cossⓘ - Output Capacitance: 392 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.024 Ohm
Package: TO263
HY1920B substitution
HY1920B Datasheet (PDF)
Datasheet: HY1908M , HY1908B , HY1908MF , HY1908PS , HY1908PM , HY1915P , HY1915B , HY1920P , IRF1407 , HY1920W , HY19P03D , HY19P03U , HY19P03V , HY19P03P , HY19P03B , HY3003D , HY3003U .
Keywords - HY1920B MOSFET datasheet
HY1920B cross reference
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