HY19P03D MOSFET. Datasheet pdf. Equivalent
Type Designator: HY19P03D
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pdⓘ - Maximum Power Dissipation: 50 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
|Id|ⓘ - Maximum Drain Current: 90 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 90 nC
trⓘ - Rise Time: 16 nS
Cossⓘ - Output Capacitance: 461 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.006 Ohm
Package: TO252
HY19P03D Transistor Equivalent Substitute - MOSFET Cross-Reference Search
HY19P03D Datasheet (PDF)
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HY19P03 D/U/V P-Channel Enhancement Mode MOSFET Feature Pin Description -30V/-90A RDS(ON)= 4.8m(typ.)@VGS = 10V RDS(ON)= 6.5m(typ.)@VGS = 4.5V 100% avalanche tested Reliable and Rugged Lead Free and Green Devices Available (RoHS Compliant) TO-252-2L TO-251-3L TO-251-3S Applications Power Management in DC/DC converter. P-Channel MOSFET Ordering a
hy19p03p hy19p03b.pdf
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HY19P03P/BP-Channel Enhancement Mode MOSFETFeature Description Pin Description -30V/-90ARDS(ON)= 4.7m(typ.)@VGS =-10VRDS(ON)= 6.5m(typ.)@VGS =-4.5VSGD 100% avalanche tested Reliable and RuggedGDS Lead Free and Green Devices AvailableTO-220FB-3L TO-263-2L (RoHS Compliant)Applications Switching Application Power Management for DC/DCP-Channel MOSFETOrdering
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .