HY19P03D Specs and Replacement
Type Designator: HY19P03D
Type of Transistor: MOSFET
Type of Control Channel: P-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 50 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 90 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 16 nS
Cossⓘ - Output Capacitance: 461 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.006 Ohm
Package: TO252
HY19P03D substitution
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HY19P03D datasheet
hy19p03d hy19p03u hy19p03v.pdf
HY19P03 D/U/V P-Channel Enhancement Mode MOSFET Feature Pin Description -30V/-90A RDS(ON)= 4.8m (typ.)@VGS = 10V RDS(ON)= 6.5m (typ.)@VGS = 4.5V 100% avalanche tested Reliable and Rugged Lead Free and Green Devices Available (RoHS Compliant) TO-252-2L TO-251-3L TO-251-3S Applications Power Management in DC/DC converter. P-Channel MOSFET Ordering a... See More ⇒
hy19p03p hy19p03b.pdf
HY19P03P/B P-Channel Enhancement Mode MOSFET Feature Description Pin Description -30V/-90A RDS(ON)= 4.7m (typ.)@VGS =-10V RDS(ON)= 6.5m (typ.)@VGS =-4.5V S GD 100% avalanche tested Reliable and Rugged GDS Lead Free and Green Devices Available TO-220FB-3L TO-263-2L (RoHS Compliant) Applications Switching Application Power Management for DC/DC P-Channel MOSFET Ordering... See More ⇒
Detailed specifications: HY1908MF , HY1908PS , HY1908PM , HY1915P , HY1915B , HY1920P , HY1920B , HY1920W , AO4407 , HY19P03U , HY19P03V , HY19P03P , HY19P03B , HY3003D , HY3003U , HY3003V , HY3008P .
Keywords - HY19P03D MOSFET specs
HY19P03D cross reference
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HY19P03D substitution
HY19P03D replacement
Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs
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