All MOSFET. HY3312PM Datasheet

 

HY3312PM Datasheet and Replacement


   Type Designator: HY3312PM
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 278 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 125 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
   |Id| ⓘ - Maximum Drain Current: 130 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 39 nS
   Cossⓘ - Output Capacitance: 940 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.009 Ohm
   Package: TO3P
 

 HY3312PM substitution

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HY3312PM Datasheet (PDF)

 ..1. Size:910K  hymexa
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HY3312PM

HY3312P/M/B/PS/PMN-Channel Enhancement Mode MOSFETFeaturesPin Description 125V/130ARDS(ON)= 7.7 m(typ.) @ VGS=10VSD 100% avalanche testedGSD G Reliable and Rugged SDG Lead Free and Green Devices AvailableTO-220FB-3L TO-220FB-3S TO-263-2L(RoHS Compliant)SDGSDpplications GATO-3PS-3L TO-3PM-3SSwitching application

Datasheet: HY3215M , HY3215B , HY3215PS , HY3215PM , HY3312P , HY3312M , HY3312B , HY3312PS , 8N60 , HY3403P , HY3403B , HY3503C2 , HY3606P , HY3606B , HY3704P , HY3704B , HY3708P .

History: FK3303010L | HGB042N10S | ME6874-G | DTM4926 | NCE60N390I | MX2N4861 | SVG104R0NS

Keywords - HY3312PM MOSFET datasheet

 HY3312PM cross reference
 HY3312PM equivalent finder
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 HY3312PM substitution
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