HY3312PM MOSFET. Datasheet pdf. Equivalent
Type Designator: HY3312PM
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 278 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 125 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 130 A
Tjⓘ - Maximum Junction Temperature: 175 °C
Qgⓘ - Total Gate Charge: 130 nC
trⓘ - Rise Time: 39 nS
Cossⓘ - Output Capacitance: 940 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.009 Ohm
Package: TO3P
HY3312PM Transistor Equivalent Substitute - MOSFET Cross-Reference Search
HY3312PM Datasheet (PDF)
..1. Size:910K hymexa
hy3312p hy3312m hy3312b hy3312ps hy3312pm.pdf
hy3312p hy3312m hy3312b hy3312ps hy3312pm.pdf
HY3312P/M/B/PS/PMN-Channel Enhancement Mode MOSFETFeaturesPin Description 125V/130ARDS(ON)= 7.7 m(typ.) @ VGS=10VSD 100% avalanche testedGSD G Reliable and Rugged SDG Lead Free and Green Devices AvailableTO-220FB-3L TO-220FB-3S TO-263-2L(RoHS Compliant)SDGSDpplications GATO-3PS-3L TO-3PM-3SSwitching application
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
