HY3606B Datasheet. Specs and Replacement

Type Designator: HY3606B

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 214 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V

|Id| ⓘ - Maximum Drain Current: 162 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 18 nS

Cossⓘ - Output Capacitance: 857 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0045 Ohm

Package: TO263

HY3606B substitution

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HY3606B datasheet

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HY3606B

HY3606P/B N-Channel Enhancement Mode MOSFET Features Pin Description 60V/162A RDS(ON)= 3.5 m (typ.) @ VGS=10V 100% avalanche tested Reliable and Rugged S Lead Free and Green Devices Available D G (RoHS Compliant) S D G TO-263-2L TO-263-2L TO-220FB-3L TO-220FB-3L Applications D Switching application Power Management for Inverter Systems. G N-Channel MOSFET ... See More ⇒

Detailed specifications: HY3312M, HY3312B, HY3312PS, HY3312PM, HY3403P, HY3403B, HY3503C2, HY3606P, MMIS60R580P, HY3704P, HY3704B, HY3708P, HY3708M, HY3708B, HY3708PS, HY3708PM, HY3712P

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