All MOSFET. HY3606B Datasheet

 

HY3606B Datasheet and Replacement


   Type Designator: HY3606B
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 214 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
   |Id| ⓘ - Maximum Drain Current: 162 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 18 nS
   Cossⓘ - Output Capacitance: 857 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0045 Ohm
   Package: TO263
 

 HY3606B substitution

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HY3606B Datasheet (PDF)

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HY3606B

HY3606P/BN-Channel Enhancement Mode MOSFETFeatures Pin Description 60V/162ARDS(ON)= 3.5 m (typ.) @ VGS=10V100% avalanche tested Reliable and RuggedS Lead Free and Green Devices AvailableDG(RoHS Compliant)SDGTO-263-2LTO-263-2LTO-220FB-3LTO-220FB-3LApplicationsD Switching application Power Management for Inverter Systems.G N-Channel MOSFET

Datasheet: HY3312M , HY3312B , HY3312PS , HY3312PM , HY3403P , HY3403B , HY3503C2 , HY3606P , 2N7002 , HY3704P , HY3704B , HY3708P , HY3708M , HY3708B , HY3708PS , HY3708PM , HY3712P .

History: TPP65R360M | LN2324DT2AG | 6N60KG-TND-R | 12N70G-TF3T-T | SPA06N60C3 | STB25NM50N-1 | 2SK1315L

Keywords - HY3606B MOSFET datasheet

 HY3606B cross reference
 HY3606B equivalent finder
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