All MOSFET. HY3704P Datasheet

 

HY3704P Datasheet and Replacement


   Type Designator: HY3704P
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 192 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 176 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 18 nS
   Cossⓘ - Output Capacitance: 1028 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0036 Ohm
   Package: TO220
 

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HY3704P Datasheet (PDF)

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HY3704P

HY3704P/BN-Channel Enhancement Mode MOSFETFeatures Pin Description 40V/176ARDS(ON)= 3.0 m(typ.) @ VGS=10V 100% avalanche tested Reliable and Rugged SGD Lead Free and Green Devices Available(RoHS Compliant)GDSTO-220FB-3L TO-263-2LTO-220FB-3L TO-263-2LApplications Switching application Power Management for DC/DCN-Channel MOSFETOrdering a

 9.1. Size:1054K  hymexa
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HY3704P

HY3708P/M/B/PS/PMN-Channel Enhancement Mode MOSFETatures Pin DescriptionFe 80V/170ARDS(ON)= 3.8 m(typ.) @ VGS=10VSDGS 100% avalanche testedDGSD Reliable and RuggedGTO-220FB-3L TO-220FB-3S TO-263-2L Lead Free and Green Devices Available(RoHS Compliant)SDGSDGTO-3PS-3L TO-3PM-3SApplications Power Management for Inverter S

Datasheet: HY3312B , HY3312PS , HY3312PM , HY3403P , HY3403B , HY3503C2 , HY3606P , HY3606B , HY1906P , HY3704B , HY3708P , HY3708M , HY3708B , HY3708PS , HY3708PM , HY3712P , HY3712M .

History: NCE60NF055F | H04N60F | WMN30N80M3 | SFF240J | 2SK1008-01 | BUZ83

Keywords - HY3704P MOSFET datasheet

 HY3704P cross reference
 HY3704P equivalent finder
 HY3704P lookup
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