All MOSFET. HY3704P Datasheet

 

HY3704P MOSFET. Datasheet pdf. Equivalent


   Type Designator: HY3704P
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 192 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 176 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 122 nC
   trⓘ - Rise Time: 18 nS
   Cossⓘ - Output Capacitance: 1028 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0036 Ohm
   Package: TO220

 HY3704P Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

HY3704P Datasheet (PDF)

 ..1. Size:1014K  hymexa
 hy3704p hy3704b.pdf

HY3704P HY3704P

HY3704P/BN-Channel Enhancement Mode MOSFETFeatures Pin Description 40V/176ARDS(ON)= 3.0 m(typ.) @ VGS=10V 100% avalanche tested Reliable and Rugged SGD Lead Free and Green Devices Available(RoHS Compliant)GDSTO-220FB-3L TO-263-2LTO-220FB-3L TO-263-2LApplications Switching application Power Management for DC/DCN-Channel MOSFETOrdering a

 9.1. Size:1054K  hymexa
 hy3708p hy3708m hy3708b hy3708ps hy3708pm.pdf

HY3704P HY3704P

HY3708P/M/B/PS/PMN-Channel Enhancement Mode MOSFETatures Pin DescriptionFe 80V/170ARDS(ON)= 3.8 m(typ.) @ VGS=10VSDGS 100% avalanche testedDGSD Reliable and RuggedGTO-220FB-3L TO-220FB-3S TO-263-2L Lead Free and Green Devices Available(RoHS Compliant)SDGSDGTO-3PS-3L TO-3PM-3SApplications Power Management for Inverter S

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

 

 
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