HY3712M Datasheet. Specs and Replacement

Type Designator: HY3712M

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 339 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 125 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V

|Id| ⓘ - Maximum Drain Current: 170 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 46 nS

Cossⓘ - Output Capacitance: 980 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0075 Ohm

Package: TO220

HY3712M substitution

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HY3712M datasheet

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HY3712M

HY3712P/M/B/PS/PM N-Channel Enhancement Mode MOSFET F eatures Pin Description 125V/170A RDS(ON)= 6.3 m (typ.) @ VGS=10V S D G 100% avalanche tested S D G S Reliable and Rugged D G TO-220FB-3L TO-220FB-3M TO-263-2L Lead Free and Green Devices Available (RoHS Compliant) S D G S S D D G G TO-220MF-3L TO-3PS-3L TO-3PM-3S pplications A Switchi... See More ⇒

Detailed specifications: HY3704P, HY3704B, HY3708P, HY3708M, HY3708B, HY3708PS, HY3708PM, HY3712P, IRF740, HY3712B, HY3712PS, HY3712PM, HY3906W, HY3906A, HY3912W, HY3912A, HY4004P

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