All MOSFET. HY3712M Datasheet

 

HY3712M MOSFET. Datasheet pdf. Equivalent


   Type Designator: HY3712M
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 339 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 125 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 170 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 189 nC
   trⓘ - Rise Time: 46 nS
   Cossⓘ - Output Capacitance: 980 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0075 Ohm
   Package: TO220

 HY3712M Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

HY3712M Datasheet (PDF)

 ..1. Size:1051K  hymexa
 hy3712p hy3712m hy3712b hy3712ps hy3712pm.pdf

HY3712M HY3712M

HY3712P/M/B/PS/PMN-Channel Enhancement Mode MOSFETFeaturesPin Description 125V/170ARDS(ON)= 6.3 m(typ.) @ VGS=10VSDG 100% avalanche tested SDGS Reliable and Rugged DGTO-220FB-3L TO-220FB-3M TO-263-2L Lead Free and Green Devices Available(RoHS Compliant)SDGSSDDGGTO-220MF-3L TO-3PS-3L TO-3PM-3SpplicationsASwitchi

Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 2SK3568 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

History: FQAF9P25 | KP750A | WMK53N60C4 | KP901B | HM2319A | UTT25P10L-TF3-T | IRFBG30PBF

 

 
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