All MOSFET. HY3712PM Datasheet

 

HY3712PM Datasheet and Replacement


   Type Designator: HY3712PM
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 339 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 125 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
   |Id| ⓘ - Maximum Drain Current: 170 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 46 nS
   Cossⓘ - Output Capacitance: 980 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0075 Ohm
   Package: TO3P
 

 HY3712PM substitution

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HY3712PM Datasheet (PDF)

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HY3712PM

HY3712P/M/B/PS/PMN-Channel Enhancement Mode MOSFETFeaturesPin Description 125V/170ARDS(ON)= 6.3 m(typ.) @ VGS=10VSDG 100% avalanche tested SDGS Reliable and Rugged DGTO-220FB-3L TO-220FB-3M TO-263-2L Lead Free and Green Devices Available(RoHS Compliant)SDGSSDDGGTO-220MF-3L TO-3PS-3L TO-3PM-3SpplicationsASwitchi

Datasheet: HY3708M , HY3708B , HY3708PS , HY3708PM , HY3712P , HY3712M , HY3712B , HY3712PS , IRF540 , HY3906W , HY3906A , HY3912W , HY3912A , HY4004P , HY4004B , HY4008B6 , HY4008P .

History: WFP10N65 | AOWF4N60 | SI1307DL | 2SK4105 | TPC8401 | FJ6K0101

Keywords - HY3712PM MOSFET datasheet

 HY3712PM cross reference
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