HY3712PM MOSFET. Datasheet pdf. Equivalent
Type Designator: HY3712PM
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 339 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 125 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 170 A
Tjⓘ - Maximum Junction Temperature: 175 °C
Qgⓘ - Total Gate Charge: 189 nC
trⓘ - Rise Time: 46 nS
Cossⓘ - Output Capacitance: 980 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0075 Ohm
Package: TO3P
HY3712PM Transistor Equivalent Substitute - MOSFET Cross-Reference Search
HY3712PM Datasheet (PDF)
..1. Size:1051K hymexa
hy3712p hy3712m hy3712b hy3712ps hy3712pm.pdf
hy3712p hy3712m hy3712b hy3712ps hy3712pm.pdf
HY3712P/M/B/PS/PMN-Channel Enhancement Mode MOSFETFeaturesPin Description 125V/170ARDS(ON)= 6.3 m(typ.) @ VGS=10VSDG 100% avalanche tested SDGS Reliable and Rugged DGTO-220FB-3L TO-220FB-3M TO-263-2L Lead Free and Green Devices Available(RoHS Compliant)SDGSSDDGGTO-220MF-3L TO-3PS-3L TO-3PM-3SpplicationsASwitchi
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
