HY3912W Datasheet and Replacement
Type Designator: HY3912W
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 349 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 125 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
|Id| ⓘ - Maximum Drain Current: 190 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
tr ⓘ - Rise Time: 46 nS
Cossⓘ - Output Capacitance: 750 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0075 Ohm
Package: TO247
HY3912W substitution
HY3912W Datasheet (PDF)
hy3912w hy3912a.pdf
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Datasheet: HY3708PM , HY3712P , HY3712M , HY3712B , HY3712PS , HY3712PM , HY3906W , HY3906A , IRFP460 , HY3912A , HY4004P , HY4004B , HY4008B6 , HY4008P , HY4008M , HY4008B , HY4008PS .
Keywords - HY3912W MOSFET datasheet
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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.
