HY3912W Datasheet. Specs and Replacement

Type Designator: HY3912W

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 349 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 125 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V

|Id| ⓘ - Maximum Drain Current: 190 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 46 nS

Cossⓘ - Output Capacitance: 750 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0075 Ohm

Package: TO247

HY3912W substitution

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HY3912W datasheet

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HY3912W

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Detailed specifications: HY3708PM, HY3712P, HY3712M, HY3712B, HY3712PS, HY3712PM, HY3906W, HY3906A, IRFP460, HY3912A, HY4004P, HY4004B, HY4008B6, HY4008P, HY4008M, HY4008B, HY4008PS

Keywords - HY3912W MOSFET specs

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.