All MOSFET. HY3912W Datasheet

 

HY3912W Datasheet and Replacement


   Type Designator: HY3912W
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 349 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 125 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
   |Id| ⓘ - Maximum Drain Current: 190 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 46 nS
   Cossⓘ - Output Capacitance: 750 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0075 Ohm
   Package: TO247
 

 HY3912W substitution

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HY3912W Datasheet (PDF)

 ..1. Size:1229K  hymexa
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HY3912W

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Datasheet: HY3708PM , HY3712P , HY3712M , HY3712B , HY3712PS , HY3712PM , HY3906W , HY3906A , IRF640 , HY3912A , HY4004P , HY4004B , HY4008B6 , HY4008P , HY4008M , HY4008B , HY4008PS .

History: AUIRF9952Q | LSE80R680GT

Keywords - HY3912W MOSFET datasheet

 HY3912W cross reference
 HY3912W equivalent finder
 HY3912W lookup
 HY3912W substitution
 HY3912W replacement

 

 
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