All MOSFET. HY4903B6 Datasheet

 

HY4903B6 Datasheet and Replacement


   Type Designator: HY4903B6
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 268 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 314 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 120 nS
   Cossⓘ - Output Capacitance: 1226 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0017 Ohm
   Package: TO263-6L
 

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HY4903B6 Datasheet (PDF)

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HY4903B6

HY4903B6 N-Channel Enhancement Mode MOSFET Feature Description Pin Description 30V/314A RDS(ON)= 1.3m(typ.)@VGS = 10V RDS(ON)= 1.7m(typ.)@VGS = 4.5V 100% Avalanche Tested Reliable and Rugged Pin7 Lead Free and Green Devices Available (RoHS Compliant) Pin1 TO-263-6L Pin4 Applications Pin1 Switch application Brushless Motor Drive

 7.1. Size:696K  hymexa
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HY4903B6

HY4903P/BN-Channel Enhancement Mode MOSFETFeatures Pin Description 30V/290ARDS(ON)=1.6m(typ.) @VGS = 10V 100% avalanche tested Excellent CdV/dt effect declineSGD Device Available GDSTO-220FB-3L TO-263-2L Applications Switching Application Power Management for DC/DCN-Channel MOSFETOrdering and Marking InformationPackage CodeP BP : TO-220FB-3L

Datasheet: HY4306B , HY4504B6 , HY4504P , HY4504B , HY4504W , HY4504A , HY4903P , HY4903B , K3569 , HY5110W , HY5110A , HY5204W , HY5204A , HY5208W , HY5208A , HY5608W , HY5608A .

History: NCE75H21 | AM3850C | BSB015N04NX3G | UTT6NP10G-S08-R | SIA537EDJ | AUIRF3315S | QM2N7002E3K1

Keywords - HY4903B6 MOSFET datasheet

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