HY4903B6 Datasheet. Specs and Replacement

Type Designator: HY4903B6

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 268 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 314 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 120 nS

Cossⓘ - Output Capacitance: 1226 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0017 Ohm

Package: TO263-6L

HY4903B6 substitution

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HY4903B6 datasheet

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HY4903B6

HY4903B6 N-Channel Enhancement Mode MOSFET Feature Description Pin Description 30V/314A RDS(ON)= 1.3m (typ.)@VGS = 10V RDS(ON)= 1.7m (typ.)@VGS = 4.5V 100% Avalanche Tested Reliable and Rugged Pin7 Lead Free and Green Devices Available (RoHS Compliant) Pin1 TO-263-6L Pin4 Applications Pin1 Switch application Brushless Motor Drive ... See More ⇒

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HY4903B6

HY4903P/B N-Channel Enhancement Mode MOSFET Features Pin Description 30V/290A RDS(ON)=1.6m (typ.) @VGS = 10V 100% avalanche tested Excellent CdV/dt effect decline S GD Device Available GDS TO-220FB-3L TO-263-2L Applications Switching Application Power Management for DC/DC N-Channel MOSFET Ordering and Marking Information Package Code P B P TO-220FB-3L... See More ⇒

Detailed specifications: HY4306B, HY4504B6, HY4504P, HY4504B, HY4504W, HY4504A, HY4903P, HY4903B, IRF9540, HY5110W, HY5110A, HY5204W, HY5204A, HY5208W, HY5208A, HY5608W, HY5608A

Keywords - HY4903B6 MOSFET specs

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.