All MOSFET. HY5110W Datasheet

 

 

HY5110W Datasheet and Replacement


   Type Designator: HY5110W
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 500 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
   |Id| ⓘ - Maximum Drain Current: 316 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 49 nS
   Cossⓘ - Output Capacitance: 1558 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0025 Ohm
   Package: TO247
 

 HY5110W substitution

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HY5110W Datasheet (PDF)

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HY5110W

HY5110W/AN-Channel Enhancement Mode MOSFETFeatures Pin Description 100V/316A2.1 RDS(ON)= m (typ.) @ VGS=10V Avalanche Rated Reliable and Rugged Lead Free and Green Devices Available(RoHS Compliant)SSDDGGTO-247-3L TO-3P-3LApplicationsD Power Management for Inverter Systems.G N-Channel MOSFETSOrdering and Marking InformationPackage CodeW AW

Datasheet: HY4504B6 , HY4504P , HY4504B , HY4504W , HY4504A , HY4903P , HY4903B , HY4903B6 , AON7408 , HY5110A , HY5204W , HY5204A , HY5208W , HY5208A , HY5608W , HY5608A , HYG018N10NS1B6 .

History: RU6075R | RFD14N05L

Keywords - HY5110W MOSFET datasheet

 HY5110W cross reference
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