All MOSFET. HY5110W Datasheet

 

HY5110W MOSFET. Datasheet pdf. Equivalent


   Type Designator: HY5110W
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 500 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 316 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 356 nC
   trⓘ - Rise Time: 49 nS
   Cossⓘ - Output Capacitance: 1558 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0025 Ohm
   Package: TO247

 HY5110W Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

HY5110W Datasheet (PDF)

 ..1. Size:2766K  hymexa
 hy5110w hy5110a.pdf

HY5110W HY5110W

HY5110W/AN-Channel Enhancement Mode MOSFETFeatures Pin Description 100V/316A2.1 RDS(ON)= m (typ.) @ VGS=10V Avalanche Rated Reliable and Rugged Lead Free and Green Devices Available(RoHS Compliant)SSDDGGTO-247-3L TO-3P-3LApplicationsD Power Management for Inverter Systems.G N-Channel MOSFETSOrdering and Marking InformationPackage CodeW AW

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
Back to Top