HY5110W Datasheet. Specs and Replacement

Type Designator: HY5110W

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 500 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V

|Id| ⓘ - Maximum Drain Current: 316 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 49 nS

Cossⓘ - Output Capacitance: 1558 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0025 Ohm

Package: TO247

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HY5110W datasheet

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HY5110W

HY5110W/A N-Channel Enhancement Mode MOSFET Features Pin Description 100V/316A 2.1 RDS(ON)= m (typ.) @ VGS=10V Avalanche Rated Reliable and Rugged Lead Free and Green Devices Available (RoHS Compliant) S S D D G G TO-247-3L TO-3P-3L Applications D Power Management for Inverter Systems. G N-Channel MOSFET S Ordering and Marking Information Package Code W A W... See More ⇒

Detailed specifications: HY4504B6, HY4504P, HY4504B, HY4504W, HY4504A, HY4903P, HY4903B, HY4903B6, AON7408, HY5110A, HY5204W, HY5204A, HY5208W, HY5208A, HY5608W, HY5608A, HYG018N10NS1B6

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