All MOSFET. HY5204W Datasheet

 

HY5204W Datasheet and Replacement


   Type Designator: HY5204W
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 348 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 320 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 33 nS
   Cossⓘ - Output Capacitance: 2036 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0016 Ohm
   Package: TO247
 

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HY5204W Datasheet (PDF)

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HY5204W

HY5204W/AN-Channel Enhancement Mode MOSFETFeatures Pin Description S S D DGGTO-247A-3L TO-3P-3L Applications Ordering and Marking Information

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HY5204W

HY5208W/AN-Channel Enhancement Mode MOSFETFeatures Pin Description 80V/320A1.7RDS(ON)= m (typ.) @ VGS=10V Avalanche Rated Reliable and Rugged Lead Free and Green Devices AvailableSSD(RoHS Compliant)DGGTO-247A-3LTO-3P-3LApplications Power Management for Inverter Systems.N-Channel MOSFETOrdering and Marking InformationPackage Code

Datasheet: HY4504B , HY4504W , HY4504A , HY4903P , HY4903B , HY4903B6 , HY5110W , HY5110A , 12N60 , HY5204A , HY5208W , HY5208A , HY5608W , HY5608A , HYG018N10NS1B6 , HYG020N04NA1P , HYG020N04NA1B .

History: AP65SL190AWL | IRF7509PBF-1 | WSD30160DN56 | FDD3N40TM | VBM1402 | 2SK65 | NVBF170L

Keywords - HY5204W MOSFET datasheet

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