HY5204A Datasheet and Replacement
Type Designator: HY5204A
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 348 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 320 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
tr ⓘ - Rise Time: 33 nS
Cossⓘ - Output Capacitance: 2036 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0016 Ohm
Package: TO3P
HY5204A substitution
HY5204A Datasheet (PDF)
hy5204w hy5204a.pdf

HY5204W/AN-Channel Enhancement Mode MOSFETFeatures Pin Description S S D DGGTO-247A-3L TO-3P-3L Applications Ordering and Marking Information
hy5208w hy5208a.pdf

HY5208W/AN-Channel Enhancement Mode MOSFETFeatures Pin Description 80V/320A1.7RDS(ON)= m (typ.) @ VGS=10V Avalanche Rated Reliable and Rugged Lead Free and Green Devices AvailableSSD(RoHS Compliant)DGGTO-247A-3LTO-3P-3LApplications Power Management for Inverter Systems.N-Channel MOSFETOrdering and Marking InformationPackage Code
Datasheet: HY4504W , HY4504A , HY4903P , HY4903B , HY4903B6 , HY5110W , HY5110A , HY5204W , K4145 , HY5208W , HY5208A , HY5608W , HY5608A , HYG018N10NS1B6 , HYG020N04NA1P , HYG020N04NA1B , HYG020N04NA1PL .
History: PK527BA
Keywords - HY5204A MOSFET datasheet
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History: PK527BA



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