HY5208A Datasheet. Specs and Replacement
Type Designator: HY5208A
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 416 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 80 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
|Id| ⓘ - Maximum Drain Current: 320 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 35 nS
Cossⓘ - Output Capacitance: 1500 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.002 Ohm
Package: TO3P
HY5208A substitution
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HY5208A datasheet
hy5208w hy5208a.pdf
HY5208W/A N-Channel Enhancement Mode MOSFET Features Pin Description 80V/320A 1.7 RDS(ON)= m (typ.) @ VGS=10V Avalanche Rated Reliable and Rugged Lead Free and Green Devices Available S S D (RoHS Compliant) D G G TO-247A-3L TO-3P-3L Applications Power Management for Inverter Systems. N-Channel MOSFET Ordering and Marking Information Package Code ... See More ⇒
hy5204w hy5204a.pdf
HY5204W/A N-Channel Enhancement Mode MOSFET Features Pin Description S S D D G G TO-247A-3L TO-3P-3L Applications Ordering and Marking Information ... See More ⇒
Detailed specifications: HY4903P, HY4903B, HY4903B6, HY5110W, HY5110A, HY5204W, HY5204A, HY5208W, IRF4905, HY5608W, HY5608A, HYG018N10NS1B6, HYG020N04NA1P, HYG020N04NA1B, HYG020N04NA1PL, HYG023N03LR1D, HYG023N03LR1U
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