All MOSFET. HY5208A Datasheet

 

HY5208A MOSFET. Datasheet pdf. Equivalent


   Type Designator: HY5208A
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 416 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 80 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 320 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 298 nC
   trⓘ - Rise Time: 35 nS
   Cossⓘ - Output Capacitance: 1500 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.002 Ohm
   Package: TO3P

 HY5208A Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

HY5208A Datasheet (PDF)

 ..1. Size:656K  hymexa
 hy5208w hy5208a.pdf

HY5208A HY5208A

HY5208W/AN-Channel Enhancement Mode MOSFETFeatures Pin Description 80V/320A1.7RDS(ON)= m (typ.) @ VGS=10V Avalanche Rated Reliable and Rugged Lead Free and Green Devices AvailableSSD(RoHS Compliant)DGGTO-247A-3LTO-3P-3LApplications Power Management for Inverter Systems.N-Channel MOSFETOrdering and Marking InformationPackage Code

 9.1. Size:762K  hymexa
 hy5204w hy5204a.pdf

HY5208A HY5208A

HY5204W/AN-Channel Enhancement Mode MOSFETFeatures Pin Description S S D DGGTO-247A-3L TO-3P-3L Applications Ordering and Marking Information

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: MCH3383 | 8N60L-T2Q-T

 

 
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