HY5608W MOSFET. Datasheet pdf. Equivalent
Type Designator: HY5608W
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 500 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 80 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 360 A
Tjⓘ - Maximum Junction Temperature: 175 °C
Qgⓘ - Total Gate Charge: 365 nC
trⓘ - Rise Time: 47 nS
Cossⓘ - Output Capacitance: 1714 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.002 Ohm
Package: TO247
HY5608W Transistor Equivalent Substitute - MOSFET Cross-Reference Search
HY5608W Datasheet (PDF)
..1. Size:690K hymexa
hy5608w hy5608a.pdf
hy5608w hy5608a.pdf
HY5608W/AN-Channel Enhancement Mode MOSFETFeatures Pin Description 80V/360ARDS(ON)= 1.5 m(typ.) @ VGS=10V 100% avalanche tested Reliable and Rugged Lead Free and Green Devices AvailableSSDDGG(RoHS Compliant)TO-247A-3LTO-3P-3LApplicationsSwitching application Power Management for Inverter Systems.N Channel MOSFETOrdering and Mar
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