All MOSFET. HY5608W Datasheet

 

HY5608W Datasheet and Replacement


   Type Designator: HY5608W
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 500 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 80 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
   |Id| ⓘ - Maximum Drain Current: 360 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 47 nS
   Cossⓘ - Output Capacitance: 1714 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.002 Ohm
   Package: TO247
 

 HY5608W substitution

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HY5608W Datasheet (PDF)

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HY5608W

HY5608W/AN-Channel Enhancement Mode MOSFETFeatures Pin Description 80V/360ARDS(ON)= 1.5 m(typ.) @ VGS=10V 100% avalanche tested Reliable and Rugged Lead Free and Green Devices AvailableSSDDGG(RoHS Compliant)TO-247A-3LTO-3P-3LApplicationsSwitching application Power Management for Inverter Systems.N Channel MOSFETOrdering and Mar

Datasheet: HY4903B , HY4903B6 , HY5110W , HY5110A , HY5204W , HY5204A , HY5208W , HY5208A , 5N60 , HY5608A , HYG018N10NS1B6 , HYG020N04NA1P , HYG020N04NA1B , HYG020N04NA1PL , HYG023N03LR1D , HYG023N03LR1U , HYG023N03LR1V .

History: TK4P50D | AOK42S60L | VBMB165R07S | AUIRF2804STRR | FHA20N60A | SHD225617 | 2SK3690-01

Keywords - HY5608W MOSFET datasheet

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