All MOSFET. HY5608W Datasheet

 

HY5608W MOSFET. Datasheet pdf. Equivalent


   Type Designator: HY5608W
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 500 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 80 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 360 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 365 nC
   trⓘ - Rise Time: 47 nS
   Cossⓘ - Output Capacitance: 1714 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.002 Ohm
   Package: TO247

 HY5608W Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

HY5608W Datasheet (PDF)

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 hy5608w hy5608a.pdf

HY5608W HY5608W

HY5608W/AN-Channel Enhancement Mode MOSFETFeatures Pin Description 80V/360ARDS(ON)= 1.5 m(typ.) @ VGS=10V 100% avalanche tested Reliable and Rugged Lead Free and Green Devices AvailableSSDDGG(RoHS Compliant)TO-247A-3LTO-3P-3LApplicationsSwitching application Power Management for Inverter Systems.N Channel MOSFETOrdering and Mar

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: WMJ53N60C4

 

 
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