All MOSFET. HY5608W Datasheet

 

HY5608W Datasheet and Replacement


   Type Designator: HY5608W
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 500 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 80 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
   |Id|ⓘ - Maximum Drain Current: 360 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   trⓘ - Rise Time: 47 nS
   Cossⓘ - Output Capacitance: 1714 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.002 Ohm
   Package: TO247
      - MOSFET Cross-Reference Search

 

HY5608W Datasheet (PDF)

 ..1. Size:690K  hymexa
 hy5608w hy5608a.pdf pdf_icon

HY5608W

HY5608W/AN-Channel Enhancement Mode MOSFETFeatures Pin Description 80V/360ARDS(ON)= 1.5 m(typ.) @ VGS=10V 100% avalanche tested Reliable and Rugged Lead Free and Green Devices AvailableSSDDGG(RoHS Compliant)TO-247A-3LTO-3P-3LApplicationsSwitching application Power Management for Inverter Systems.N Channel MOSFETOrdering and Mar

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: MTN7000A3 | BRCS200P03DP | SLF13N50A | SML10S75XX | SM2501NSU | TSM4424CS | LKK47-06C5

Keywords - HY5608W MOSFET datasheet

 HY5608W cross reference
 HY5608W equivalent finder
 HY5608W lookup
 HY5608W substitution
 HY5608W replacement

 

 
Back to Top

 


 
.