All MOSFET. HY5608A Datasheet

 

HY5608A Datasheet and Replacement


   Type Designator: HY5608A
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 500 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 80 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
   |Id| ⓘ - Maximum Drain Current: 360 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 47 nS
   Cossⓘ - Output Capacitance: 1714 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.002 Ohm
   Package: TO3P
 

 HY5608A substitution

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HY5608A Datasheet (PDF)

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HY5608A

HY5608W/AN-Channel Enhancement Mode MOSFETFeatures Pin Description 80V/360ARDS(ON)= 1.5 m(typ.) @ VGS=10V 100% avalanche tested Reliable and Rugged Lead Free and Green Devices AvailableSSDDGG(RoHS Compliant)TO-247A-3LTO-3P-3LApplicationsSwitching application Power Management for Inverter Systems.N Channel MOSFETOrdering and Mar

Datasheet: HY4903B6 , HY5110W , HY5110A , HY5204W , HY5204A , HY5208W , HY5208A , HY5608W , AO3400 , HYG018N10NS1B6 , HYG020N04NA1P , HYG020N04NA1B , HYG020N04NA1PL , HYG023N03LR1D , HYG023N03LR1U , HYG023N03LR1V , HYG025N06LS1C2 .

History: UT3414 | ZXMN6A07F | PSMN4R5-40PS | SGSP575 | AP9479GM | IXFP60N25X3 | 2SK3596-01S

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