HY5608A Datasheet. Specs and Replacement

Type Designator: HY5608A

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 500 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 80 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V

|Id| ⓘ - Maximum Drain Current: 360 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 47 nS

Cossⓘ - Output Capacitance: 1714 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.002 Ohm

Package: TO3P

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HY5608A datasheet

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HY5608A

HY5608W/A N-Channel Enhancement Mode MOSFET Features Pin Description 80V/360A RDS(ON)= 1.5 m (typ.) @ VGS=10V 100% avalanche tested Reliable and Rugged Lead Free and Green Devices Available S S D D G G (RoHS Compliant) TO-247A-3L TO-3P-3L Applications Switching application Power Management for Inverter Systems. N Channel MOSFET Ordering and Mar... See More ⇒

Detailed specifications: HY4903B6, HY5110W, HY5110A, HY5204W, HY5204A, HY5208W, HY5208A, HY5608W, AO3401, HYG018N10NS1B6, HYG020N04NA1P, HYG020N04NA1B, HYG020N04NA1PL, HYG023N03LR1D, HYG023N03LR1U, HYG023N03LR1V, HYG025N06LS1C2

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.