HYG080N10LS1D Datasheet. Specs and Replacement

Type Designator: HYG080N10LS1D

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 72 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 62 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 29 nS

Cossⓘ - Output Capacitance: 766 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0091 Ohm

Package: TO252

HYG080N10LS1D substitution

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HYG080N10LS1D datasheet

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HYG080N10LS1D

HYG080N10LS1D Single N-Channel Enhancement Mode MOSFET Feature Pin Description 100V/62A RDS(ON)= 7.6m (typ.) @ VGS = 10V RDS(ON)= 11.1m (typ.) @ VGS = 4.5V 100% Avalanche Tested Reliable and Rugged Halogen- Free Devices Available (RoHS Compliant) TO-252-2L Applications High Frequency Point-of-Load Synchronous Buck Converter Single N-Channel MOSF... See More ⇒

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HYG080N10LS1D

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Detailed specifications: HYG065N07NS1U, HYG065N07NS1V, HYG065N07NS1P, HYG065N07NS1B, HYG065N15NS1B6, HYG065N15NS1P, HYG065N15NS1B, HYG068N08NR1P, STF13NM60N, HYG082N03LR1C1, HYG092N10LS1C2, HYG110P04LQ2D, HYG110P04LQ2U, HYG110P04LQ2V, HYG210P06LQ1D, HYG210P06LQ1U, HYG210P06LQ1V

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.