HYG092N10LS1C2 Datasheet and Replacement
Type Designator: HYG092N10LS1C2
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 62.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id|ⓘ - Maximum Drain Current: 60 A
Tjⓘ - Maximum Junction Temperature: 175 °C
trⓘ - Rise Time: 35.5 nS
Cossⓘ - Output Capacitance: 437 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0096 Ohm
Package: PDFN8L
HYG092N10LS1C2 Datasheet (PDF)
hyg092n10ls1c2.pdf
HYG092N10LS1C2Single N-Channel Enhancement Mode MOSFETFeature Pin DescriptionD D D DD D D D 100V/60ARDS(ON)= 7.8 m (typ.) @ VGS = 10VRDS(ON)= 11.5 m (typ.) @ VGS = 4.5V 100% Avalanche Tested Reliable and Rugged Halogen- Free Devices AvailableS S S G G S S S(RoHS Compliant)Pin1PDFN8L5x6Applications High Frequency Point-of-Load Synchronous
hyg092n10ls1c2.pdf
HYG092N10LS1C2Single N-Channel Enhancement Mode MOSFETFeature Pin DescriptionD D D DD D D D 100V/60ARDS(ON)= 7.8 m (typ.) @ VGS = 10VRDS(ON)= 11.5 m (typ.) @ VGS = 4.5V 100% Avalanche Tested Reliable and Rugged Halogen- Free Devices AvailableS S S G G S S S(RoHS Compliant)Pin1PDFN8L5x6Applications High Frequency Point-of-Load Synchronous
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
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History: IRLU2908 | IRFBC30AS
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