All MOSFET. HYG092N10LS1C2 Datasheet

 

HYG092N10LS1C2 Datasheet and Replacement


   Type Designator: HYG092N10LS1C2
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 62.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 60 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 35.5 nS
   Cossⓘ - Output Capacitance: 437 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0096 Ohm
   Package: PDFN8L
 

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HYG092N10LS1C2 Datasheet (PDF)

 ..1. Size:1465K  1
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HYG092N10LS1C2

HYG092N10LS1C2Single N-Channel Enhancement Mode MOSFETFeature Pin DescriptionD D D DD D D D 100V/60ARDS(ON)= 7.8 m (typ.) @ VGS = 10VRDS(ON)= 11.5 m (typ.) @ VGS = 4.5V 100% Avalanche Tested Reliable and Rugged Halogen- Free Devices AvailableS S S G G S S S(RoHS Compliant)Pin1PDFN8L5x6Applications High Frequency Point-of-Load Synchronous

 ..2. Size:1465K  hymexa
 hyg092n10ls1c2.pdf pdf_icon

HYG092N10LS1C2

HYG092N10LS1C2Single N-Channel Enhancement Mode MOSFETFeature Pin DescriptionD D D DD D D D 100V/60ARDS(ON)= 7.8 m (typ.) @ VGS = 10VRDS(ON)= 11.5 m (typ.) @ VGS = 4.5V 100% Avalanche Tested Reliable and Rugged Halogen- Free Devices AvailableS S S G G S S S(RoHS Compliant)Pin1PDFN8L5x6Applications High Frequency Point-of-Load Synchronous

Datasheet: HYG065N07NS1P , HYG065N07NS1B , HYG065N15NS1B6 , HYG065N15NS1P , HYG065N15NS1B , HYG068N08NR1P , HYG080N10LS1D , HYG082N03LR1C1 , IRF830 , HYG110P04LQ2D , HYG110P04LQ2U , HYG110P04LQ2V , HYG210P06LQ1D , HYG210P06LQ1U , HYG210P06LQ1V , HYG400P10LR1D , HYG400P10LR1U .

History: CS4N65FA9HD

Keywords - HYG092N10LS1C2 MOSFET datasheet

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