HYG092N10LS1C2 Datasheet. Specs and Replacement

Type Designator: HYG092N10LS1C2

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 62.5 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 60 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 35.5 nS

Cossⓘ - Output Capacitance: 437 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0096 Ohm

Package: PDFN8L

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HYG092N10LS1C2 datasheet

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 hyg092n10ls1c2.pdf pdf_icon

HYG092N10LS1C2

HYG092N10LS1C2 Single N-Channel Enhancement Mode MOSFET Feature Pin Description D D D D D D D D 100V/60A RDS(ON)= 7.8 m (typ.) @ VGS = 10V RDS(ON)= 11.5 m (typ.) @ VGS = 4.5V 100% Avalanche Tested Reliable and Rugged Halogen- Free Devices Available S S S G G S S S (RoHS Compliant) Pin1 PDFN8L 5x6 Applications High Frequency Point-of-Load Synchronous ... See More ⇒

 ..2. Size:1465K  hymexa
 hyg092n10ls1c2.pdf pdf_icon

HYG092N10LS1C2

HYG092N10LS1C2 Single N-Channel Enhancement Mode MOSFET Feature Pin Description D D D D D D D D 100V/60A RDS(ON)= 7.8 m (typ.) @ VGS = 10V RDS(ON)= 11.5 m (typ.) @ VGS = 4.5V 100% Avalanche Tested Reliable and Rugged Halogen- Free Devices Available S S S G G S S S (RoHS Compliant) Pin1 PDFN8L 5x6 Applications High Frequency Point-of-Load Synchronous ... See More ⇒

Detailed specifications: HYG065N07NS1P, HYG065N07NS1B, HYG065N15NS1B6, HYG065N15NS1P, HYG065N15NS1B, HYG068N08NR1P, HYG080N10LS1D, HYG082N03LR1C1, 2N60, HYG110P04LQ2D, HYG110P04LQ2U, HYG110P04LQ2V, HYG210P06LQ1D, HYG210P06LQ1U, HYG210P06LQ1V, HYG400P10LR1D, HYG400P10LR1U

Keywords - HYG092N10LS1C2 MOSFET specs

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