All MOSFET. HYG092N10LS1C2 Datasheet

 

HYG092N10LS1C2 MOSFET. Datasheet pdf. Equivalent


   Type Designator: HYG092N10LS1C2
   Marking Code: G092N10
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 62.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
   |Id|ⓘ - Maximum Drain Current: 60 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 47 nC
   trⓘ - Rise Time: 35.5 nS
   Cossⓘ - Output Capacitance: 437 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0096 Ohm
   Package: PDFN8L

 HYG092N10LS1C2 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

HYG092N10LS1C2 Datasheet (PDF)

 ..1. Size:1465K  1
 hyg092n10ls1c2.pdf

HYG092N10LS1C2 HYG092N10LS1C2

HYG092N10LS1C2Single N-Channel Enhancement Mode MOSFETFeature Pin DescriptionD D D DD D D D 100V/60ARDS(ON)= 7.8 m (typ.) @ VGS = 10VRDS(ON)= 11.5 m (typ.) @ VGS = 4.5V 100% Avalanche Tested Reliable and Rugged Halogen- Free Devices AvailableS S S G G S S S(RoHS Compliant)Pin1PDFN8L5x6Applications High Frequency Point-of-Load Synchronous

 ..2. Size:1465K  hymexa
 hyg092n10ls1c2.pdf

HYG092N10LS1C2 HYG092N10LS1C2

HYG092N10LS1C2Single N-Channel Enhancement Mode MOSFETFeature Pin DescriptionD D D DD D D D 100V/60ARDS(ON)= 7.8 m (typ.) @ VGS = 10VRDS(ON)= 11.5 m (typ.) @ VGS = 4.5V 100% Avalanche Tested Reliable and Rugged Halogen- Free Devices AvailableS S S G G S S S(RoHS Compliant)Pin1PDFN8L5x6Applications High Frequency Point-of-Load Synchronous

Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRFP250N , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

 

 
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