All MOSFET. HYG110P04LQ2D Datasheet

 

HYG110P04LQ2D MOSFET. Datasheet pdf. Equivalent


   Type Designator: HYG110P04LQ2D
   Marking Code: G110P04
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 57.7 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
   |Id|ⓘ - Maximum Drain Current: 50 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 76 nC
   trⓘ - Rise Time: 48 nS
   Cossⓘ - Output Capacitance: 253 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.012 Ohm
   Package: TO252

 HYG110P04LQ2D Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

HYG110P04LQ2D Datasheet (PDF)

 ..1. Size:655K  hymexa
 hyg110p04lq2d hyg110p04lq2u hyg110p04lq2v.pdf

HYG110P04LQ2D HYG110P04LQ2D

HYG110P04LQ2 D/U/V P-Channel Enhancement Mode MOSFET Feature Pin Description -40V/-50ARDS(ON)= 9.4m(typ.) @VGS = -10V RDS(ON)= 13 m(typ.) @VGS = -4.5V SDSGD 100% avalanche testedGS Reliable and Rugged DG Halogen Free and Green Devices Available (RoHS Compliant) TO-252-2L TO-251-3L TO-251-3S Applications Switching application Power Management in

 2.1. Size:739K  1
 hyg110p04lq2c2.pdf

HYG110P04LQ2D HYG110P04LQ2D

HYG110P04LQ2C2 Single P-Channel Enhancement Mode MOSFET Feature Description Pin Description -40V/-55A D D D D D D D D RDS(ON)= 9.0 m (typ.) @VGS = - 10V RDS(ON)= 13.0 m (typ.) @VGS = - 4.5V 100% Avalanche Tested Reliable and Rugged Halogen- Free Devices Available G S S S S S S G Pin1 PDFN5*6-8L Applications Switching Application Powe

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , STP80NF70 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: NDP6051

 

 
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