HYG110P04LQ2D Datasheet. Specs and Replacement

Type Designator: HYG110P04LQ2D

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 57.7 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 50 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 48 nS

Cossⓘ - Output Capacitance: 253 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.012 Ohm

Package: TO252

HYG110P04LQ2D substitution

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HYG110P04LQ2D datasheet

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 hyg110p04lq2d hyg110p04lq2u hyg110p04lq2v.pdf pdf_icon

HYG110P04LQ2D

HYG110P04LQ2 D/U/V P-Channel Enhancement Mode MOSFET Feature Pin Description -40V/-50A RDS(ON)= 9.4m (typ.) @VGS = -10V RDS(ON)= 13 m (typ.) @VGS = -4.5V S D S G D 100% avalanche tested G S Reliable and Rugged D G Halogen Free and Green Devices Available (RoHS Compliant) TO-252-2L TO-251-3L TO-251-3S Applications Switching application Power Management in ... See More ⇒

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HYG110P04LQ2D

HYG110P04LQ2C2 Single P-Channel Enhancement Mode MOSFET Feature Description Pin Description -40V/-55A D D D D D D D D RDS(ON)= 9.0 m (typ.) @VGS = - 10V RDS(ON)= 13.0 m (typ.) @VGS = - 4.5V 100% Avalanche Tested Reliable and Rugged Halogen- Free Devices Available G S S S S S S G Pin1 PDFN5*6-8L Applications Switching Application Powe... See More ⇒

Detailed specifications: HYG065N07NS1B, HYG065N15NS1B6, HYG065N15NS1P, HYG065N15NS1B, HYG068N08NR1P, HYG080N10LS1D, HYG082N03LR1C1, HYG092N10LS1C2, 8N60, HYG110P04LQ2U, HYG110P04LQ2V, HYG210P06LQ1D, HYG210P06LQ1U, HYG210P06LQ1V, HYG400P10LR1D, HYG400P10LR1U, HYG400P10LR1V

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