All MOSFET. HYG210P06LQ1D Datasheet

 

HYG210P06LQ1D Datasheet and Replacement


   Type Designator: HYG210P06LQ1D
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 60 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 40 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 17 nS
   Cossⓘ - Output Capacitance: 123 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.025 Ohm
   Package: TO252
 

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HYG210P06LQ1D Datasheet (PDF)

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HYG210P06LQ1D

HYG210P06LQ1 D/U/VP-Channel Enhancement Mode MOSFETFeature Pin Description -60V/-40ARDS(ON)= 19m(typ.) @VGS = -10VRDS(ON)= 25m(typ.) @VGS = -4.5VSD SG 100% avalanche tested D G Reliable and RuggedSD G Halogen Free and Green Devices Available(RoHS Compliant) TO-252-2L TO-251-3L TO-251-3S Applications Power Management in DC/DCP-Channe

Datasheet: HYG065N15NS1B , HYG068N08NR1P , HYG080N10LS1D , HYG082N03LR1C1 , HYG092N10LS1C2 , HYG110P04LQ2D , HYG110P04LQ2U , HYG110P04LQ2V , RU6888R , HYG210P06LQ1U , HYG210P06LQ1V , HYG400P10LR1D , HYG400P10LR1U , HYG400P10LR1V , HYG800P10LR1D , HYG800P10LR1U , HYG800P10LR1V .

History: CS4N65FA9HD

Keywords - HYG210P06LQ1D MOSFET datasheet

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