All MOSFET. HYG210P06LQ1D Datasheet

 

HYG210P06LQ1D MOSFET. Datasheet pdf. Equivalent


   Type Designator: HYG210P06LQ1D
   Marking Code: G210P06
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 60 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
   |Id|ⓘ - Maximum Drain Current: 40 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 90 nC
   trⓘ - Rise Time: 17 nS
   Cossⓘ - Output Capacitance: 123 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.025 Ohm
   Package: TO252

 HYG210P06LQ1D Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

HYG210P06LQ1D Datasheet (PDF)

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HYG210P06LQ1D HYG210P06LQ1D

HYG210P06LQ1 D/U/VP-Channel Enhancement Mode MOSFETFeature Pin Description -60V/-40ARDS(ON)= 19m(typ.) @VGS = -10VRDS(ON)= 25m(typ.) @VGS = -4.5VSD SG 100% avalanche tested D G Reliable and RuggedSD G Halogen Free and Green Devices Available(RoHS Compliant) TO-252-2L TO-251-3L TO-251-3S Applications Power Management in DC/DCP-Channe

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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