HYG210P06LQ1D Datasheet. Specs and Replacement

Type Designator: HYG210P06LQ1D

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 60 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 40 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 17 nS

Cossⓘ - Output Capacitance: 123 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.025 Ohm

Package: TO252

HYG210P06LQ1D substitution

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HYG210P06LQ1D datasheet

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HYG210P06LQ1D

HYG210P06LQ1 D/U/V P-Channel Enhancement Mode MOSFET Feature Pin Description -60V/-40A RDS(ON)= 19m (typ.) @VGS = -10V RDS(ON)= 25m (typ.) @VGS = -4.5V S D S G 100% avalanche tested D G Reliable and Rugged S D G Halogen Free and Green Devices Available (RoHS Compliant) TO-252-2L TO-251-3L TO-251-3S Applications Power Management in DC/DC P-Channe... See More ⇒

Detailed specifications: HYG065N15NS1B, HYG068N08NR1P, HYG080N10LS1D, HYG082N03LR1C1, HYG092N10LS1C2, HYG110P04LQ2D, HYG110P04LQ2U, HYG110P04LQ2V, AO3400A, HYG210P06LQ1U, HYG210P06LQ1V, HYG400P10LR1D, HYG400P10LR1U, HYG400P10LR1V, HYG800P10LR1D, HYG800P10LR1U, HYG800P10LR1V

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