HYG400P10LR1D Specs and Replacement

Type Designator: HYG400P10LR1D

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 100 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 40 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 26 nS

Cossⓘ - Output Capacitance: 189 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.055 Ohm

Package: TO252

HYG400P10LR1D substitution

- MOSFET ⓘ Cross-Reference Search

 

HYG400P10LR1D datasheet

 ..1. Size:1393K  hymexa
 hyg400p10lr1d hyg400p10lr1u hyg400p10lr1v.pdf pdf_icon

HYG400P10LR1D

HYG400P10LR1D/U/V P-Channel Enhancement Mode MOSFET Feature Pin Description -100V/-40A RDS(ON)= 42m (typ.) @ VGS = -10V RDS(ON)= 48m (typ.) @ VGS = -4.5V 100% Avalanche Tested Reliable and Rugged Halogen Free and Green Devices Available (RoHS Compliant) TO-252-2L TO-251-3L TO-251-3S Applications Portable equipment and battery powered systems DC-DC Converte... See More ⇒

 9.1. Size:896K  hy
 hyg40p120h1s.pdf pdf_icon

HYG400P10LR1D

... See More ⇒

Detailed specifications: HYG082N03LR1C1, HYG092N10LS1C2, HYG110P04LQ2D, HYG110P04LQ2U, HYG110P04LQ2V, HYG210P06LQ1D, HYG210P06LQ1U, HYG210P06LQ1V, IRF1405, HYG400P10LR1U, HYG400P10LR1V, HYG800P10LR1D, HYG800P10LR1U, HYG800P10LR1V, HSD4N65, HSU4N65, HSP4N65

Keywords - HYG400P10LR1D MOSFET specs

 HYG400P10LR1D cross reference

 HYG400P10LR1D equivalent finder

 HYG400P10LR1D pdf lookup

 HYG400P10LR1D substitution

 HYG400P10LR1D replacement

Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs