All MOSFET. HYG400P10LR1D Datasheet

 

HYG400P10LR1D MOSFET. Datasheet pdf. Equivalent


   Type Designator: HYG400P10LR1D
   Marking Code: G400P10
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Maximum Power Dissipation (Pd): 100 W
   Maximum Drain-Source Voltage |Vds|: 100 V
   Maximum Gate-Source Voltage |Vgs|: 20 V
   Maximum Gate-Threshold Voltage |Vgs(th)|: 3 V
   Maximum Drain Current |Id|: 40 A
   Maximum Junction Temperature (Tj): 175 °C
   Total Gate Charge (Qg): 83.1 nC
   Rise Time (tr): 26 nS
   Drain-Source Capacitance (Cd): 189 pF
   Maximum Drain-Source On-State Resistance (Rds): 0.055 Ohm
   Package: TO252

 HYG400P10LR1D Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

HYG400P10LR1D Datasheet (PDF)

 ..1. Size:1393K  hymexa
 hyg400p10lr1d hyg400p10lr1u hyg400p10lr1v.pdf

HYG400P10LR1D HYG400P10LR1D

HYG400P10LR1D/U/VP-Channel Enhancement Mode MOSFETFeature Pin Description -100V/-40ARDS(ON)= 42m(typ.) @ VGS = -10VRDS(ON)= 48m(typ.) @ VGS = -4.5V 100% Avalanche Tested Reliable and Rugged Halogen Free and Green Devices Available(RoHS Compliant)TO-252-2L TO-251-3L TO-251-3SApplications Portable equipment and battery powered systems DC-DC Converte

 9.1. Size:896K  hy
 hyg40p120h1s.pdf

HYG400P10LR1D HYG400P10LR1D

Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRFP250N , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

 

 
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