HYG400P10LR1D Datasheet and Replacement
Type Designator: HYG400P10LR1D
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pd ⓘ - Maximum Power Dissipation: 100 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 40 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
tr ⓘ - Rise Time: 26 nS
Cossⓘ - Output Capacitance: 189 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.055 Ohm
Package: TO252
HYG400P10LR1D substitution
HYG400P10LR1D Datasheet (PDF)
hyg400p10lr1d hyg400p10lr1u hyg400p10lr1v.pdf
HYG400P10LR1D/U/VP-Channel Enhancement Mode MOSFETFeature Pin Description -100V/-40ARDS(ON)= 42m(typ.) @ VGS = -10VRDS(ON)= 48m(typ.) @ VGS = -4.5V 100% Avalanche Tested Reliable and Rugged Halogen Free and Green Devices Available(RoHS Compliant)TO-252-2L TO-251-3L TO-251-3SApplications Portable equipment and battery powered systems DC-DC Converte
Datasheet: HYG082N03LR1C1 , HYG092N10LS1C2 , HYG110P04LQ2D , HYG110P04LQ2U , HYG110P04LQ2V , HYG210P06LQ1D , HYG210P06LQ1U , HYG210P06LQ1V , NCEP15T14 , HYG400P10LR1U , HYG400P10LR1V , HYG800P10LR1D , HYG800P10LR1U , HYG800P10LR1V , HSD4N65 , HSU4N65 , HSP4N65 .
History: IRF832FI | NCE40P13S | WMK060N10LGS | AM7341P | TPC6103 | RU80T4H | FQPF13N50T
Keywords - HYG400P10LR1D MOSFET datasheet
HYG400P10LR1D cross reference
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HYG400P10LR1D substitution
HYG400P10LR1D replacement
History: IRF832FI | NCE40P13S | WMK060N10LGS | AM7341P | TPC6103 | RU80T4H | FQPF13N50T
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