All MOSFET. HYG400P10LR1U Datasheet

 

HYG400P10LR1U Datasheet and Replacement


   Type Designator: HYG400P10LR1U
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 100 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 40 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 26 nS
   Cossⓘ - Output Capacitance: 189 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.055 Ohm
   Package: TO251
 

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HYG400P10LR1U Datasheet (PDF)

 ..1. Size:1393K  hymexa
 hyg400p10lr1d hyg400p10lr1u hyg400p10lr1v.pdf pdf_icon

HYG400P10LR1U

HYG400P10LR1D/U/VP-Channel Enhancement Mode MOSFETFeature Pin Description -100V/-40ARDS(ON)= 42m(typ.) @ VGS = -10VRDS(ON)= 48m(typ.) @ VGS = -4.5V 100% Avalanche Tested Reliable and Rugged Halogen Free and Green Devices Available(RoHS Compliant)TO-252-2L TO-251-3L TO-251-3SApplications Portable equipment and battery powered systems DC-DC Converte

 9.1. Size:896K  hy
 hyg40p120h1s.pdf pdf_icon

HYG400P10LR1U

Datasheet: HYG092N10LS1C2 , HYG110P04LQ2D , HYG110P04LQ2U , HYG110P04LQ2V , HYG210P06LQ1D , HYG210P06LQ1U , HYG210P06LQ1V , HYG400P10LR1D , IRF830 , HYG400P10LR1V , HYG800P10LR1D , HYG800P10LR1U , HYG800P10LR1V , HSD4N65 , HSU4N65 , HSP4N65 , HSF4N65 .

History: STP90N55F4 | AM4502C | JMSH1566AK | ALD1102BPAL | STP38N65M5 | IPD053N08N3 | JMTQ100N04A

Keywords - HYG400P10LR1U MOSFET datasheet

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