HYG400P10LR1U Specs and Replacement

Type Designator: HYG400P10LR1U

Marking Code: G400P10

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 100 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 40 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

|VGSth|ⓘ - Maximum Gate-Threshold Voltage: 3 V

Qg ⓘ - Total Gate Charge: 83.1 nC

tr ⓘ - Rise Time: 26 nS

Cossⓘ - Output Capacitance: 189 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.055 Ohm

Package: TO251

HYG400P10LR1U substitution

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HYG400P10LR1U datasheet

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 hyg400p10lr1d hyg400p10lr1u hyg400p10lr1v.pdf pdf_icon

HYG400P10LR1U

HYG400P10LR1D/U/V P-Channel Enhancement Mode MOSFET Feature Pin Description -100V/-40A RDS(ON)= 42m (typ.) @ VGS = -10V RDS(ON)= 48m (typ.) @ VGS = -4.5V 100% Avalanche Tested Reliable and Rugged Halogen Free and Green Devices Available (RoHS Compliant) TO-252-2L TO-251-3L TO-251-3S Applications Portable equipment and battery powered systems DC-DC Converte... See More ⇒

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HYG400P10LR1U

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Detailed specifications: HYG092N10LS1C2, HYG110P04LQ2D, HYG110P04LQ2U, HYG110P04LQ2V, HYG210P06LQ1D, HYG210P06LQ1U, HYG210P06LQ1V, HYG400P10LR1D, 7N60, HYG400P10LR1V, HYG800P10LR1D, HYG800P10LR1U, HYG800P10LR1V, HSD4N65, HSU4N65, HSP4N65, HSF4N65

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