HYG400P10LR1V MOSFET. Datasheet pdf. Equivalent
Type Designator: HYG400P10LR1V
Marking Code: G400P10
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pdⓘ - Maximum Power Dissipation: 100 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
|Id|ⓘ - Maximum Drain Current: 40 A
Tjⓘ - Maximum Junction Temperature: 175 °C
Qgⓘ - Total Gate Charge: 83.1 nC
trⓘ - Rise Time: 26 nS
Cossⓘ - Output Capacitance: 189 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.055 Ohm
Package: TO251
HYG400P10LR1V Transistor Equivalent Substitute - MOSFET Cross-Reference Search
HYG400P10LR1V Datasheet (PDF)
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HYG400P10LR1D/U/VP-Channel Enhancement Mode MOSFETFeature Pin Description -100V/-40ARDS(ON)= 42m(typ.) @ VGS = -10VRDS(ON)= 48m(typ.) @ VGS = -4.5V 100% Avalanche Tested Reliable and Rugged Halogen Free and Green Devices Available(RoHS Compliant)TO-252-2L TO-251-3L TO-251-3SApplications Portable equipment and battery powered systems DC-DC Converte
Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , IRF1010E , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .
