All MOSFET. HYG800P10LR1V Datasheet

 

HYG800P10LR1V Datasheet and Replacement


   Type Designator: HYG800P10LR1V
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 75 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 20 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 21 nS
   Cossⓘ - Output Capacitance: 111 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.098 Ohm
   Package: TO251
 

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HYG800P10LR1V Datasheet (PDF)

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HYG800P10LR1V

HYG800P10LR1D/U/VP-Channel Enhancement Mode MOSFETFeature Pin Description -100V/-20ARDS(ON)= 77m(typ.) @ VGS = -10VRDS(ON)= 86m(typ.) @ VGS = -4.5V 100% avalanche tested Reliable and Rugged Halogen Free and Green Devices Available(RoHS Compliant)TO-252-2L TO-251-3L TO-251-3SApplications Power Management in DC/DC converter. Load switching.P-Chann

Datasheet: HYG210P06LQ1D , HYG210P06LQ1U , HYG210P06LQ1V , HYG400P10LR1D , HYG400P10LR1U , HYG400P10LR1V , HYG800P10LR1D , HYG800P10LR1U , 60N06 , HSD4N65 , HSU4N65 , HSP4N65 , HSF4N65 , HSBA0048 , HSBA0139 , HSBA060N10 , HSBA100P03 .

History: APM2324A | DH019N04I

Keywords - HYG800P10LR1V MOSFET datasheet

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