All MOSFET. HSD4N65 Datasheet

 

HSD4N65 Datasheet and Replacement


   Type Designator: HSD4N65
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 80 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 4 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 25 nS
   Cossⓘ - Output Capacitance: 54 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 3 Ohm
   Package: TO251
 

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HSD4N65 Datasheet (PDF)

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HSD4N65

HS4N65 650V 4A N-Channel Planar MOSFET FEATURES General Description RDSON3.0 @Vgs=10V, Id=2A HS4N65 is Fortunatus high voltage MOSFET family based on Ultra Low gate Charge(typical 13 nC) advanced planar stripe DMOS technology. This advanced Low Crss (typical 5pF) MOSFET family has optimized on-state resistance, and also Fast switching capability provides s

Datasheet: HYG210P06LQ1U , HYG210P06LQ1V , HYG400P10LR1D , HYG400P10LR1U , HYG400P10LR1V , HYG800P10LR1D , HYG800P10LR1U , HYG800P10LR1V , AON7403 , HSU4N65 , HSP4N65 , HSF4N65 , HSBA0048 , HSBA0139 , HSBA060N10 , HSBA100P03 , HSBA15810C .

History: SMK0465FJ

Keywords - HSD4N65 MOSFET datasheet

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