All MOSFET. HSBA20N15S Datasheet

 

 

HSBA20N15S Datasheet and Replacement


   Type Designator: HSBA20N15S
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 72.6 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 150 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 23 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 8.2 nS
   Cossⓘ - Output Capacitance: 93 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.056 Ohm
   Package: PRPAK5X6
 

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HSBA20N15S Datasheet (PDF)

 ..1. Size:757K  1
 hsba20n15s.pdf pdf_icon

HSBA20N15S

HSBA20N15S N-Ch 150V Fast Switching MOSFETs Description Product Summary VDS 150 V The HSBA20N15S is the highest performance trench N-ch MOSFETs with extreme high cell RDS(ON),max 56 m density, which provide excellent RDSON and gate charge for most of the synchronous buck ID 23 A converter applications. The HSBA20N15S meet the RoHS and Green Product requirement, 100% EA

 ..2. Size:757K  huashuo
 hsba20n15s.pdf pdf_icon

HSBA20N15S

HSBA20N15S N-Ch 150V Fast Switching MOSFETs Description Product Summary VDS 150 V The HSBA20N15S is the highest performance trench N-ch MOSFETs with extreme high cell RDS(ON),max 56 m density, which provide excellent RDSON and gate charge for most of the synchronous buck ID 23 A converter applications. The HSBA20N15S meet the RoHS and Green Product requirement, 100% EA

Datasheet: HSU4N65 , HSP4N65 , HSF4N65 , HSBA0048 , HSBA0139 , HSBA060N10 , HSBA100P03 , HSBA15810C , 60N06 , HSBA3004 , HSBA3014 , HSBA3031 , HSBA3048 , HSBA3050 , HSBA3052 , HSBA3054 , HSBA3056 .

History: IRFAG40

Keywords - HSBA20N15S MOSFET datasheet

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