HSBA20N15S Datasheet and Replacement
Type Designator: HSBA20N15S
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 72.6 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 150 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 23 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 8.2 nS
Cossⓘ - Output Capacitance: 93 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.056 Ohm
Package: PRPAK5X6
HSBA20N15S substitution
HSBA20N15S Datasheet (PDF)
hsba20n15s.pdf

HSBA20N15S N-Ch 150V Fast Switching MOSFETs Description Product Summary VDS 150 V The HSBA20N15S is the highest performance trench N-ch MOSFETs with extreme high cell RDS(ON),max 56 m density, which provide excellent RDSON and gate charge for most of the synchronous buck ID 23 A converter applications. The HSBA20N15S meet the RoHS and Green Product requirement, 100% EA
hsba20n15s.pdf

HSBA20N15S N-Ch 150V Fast Switching MOSFETs Description Product Summary VDS 150 V The HSBA20N15S is the highest performance trench N-ch MOSFETs with extreme high cell RDS(ON),max 56 m density, which provide excellent RDSON and gate charge for most of the synchronous buck ID 23 A converter applications. The HSBA20N15S meet the RoHS and Green Product requirement, 100% EA
Datasheet: HSU4N65 , HSP4N65 , HSF4N65 , HSBA0048 , HSBA0139 , HSBA060N10 , HSBA100P03 , HSBA15810C , AO4468 , HSBA3004 , HSBA3014 , HSBA3031 , HSBA3048 , HSBA3050 , HSBA3052 , HSBA3054 , HSBA3056 .
History: SSP7464N | IRFB4110GPBF | IRFR7746PBF | SJMN600R70MF | SSF6NS70F | IRFB4310PBF | IRFR3303PBF
Keywords - HSBA20N15S MOSFET datasheet
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History: SSP7464N | IRFB4110GPBF | IRFR7746PBF | SJMN600R70MF | SSF6NS70F | IRFB4310PBF | IRFR3303PBF



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