HSBB2627 Specs and Replacement

Type Designator: HSBB2627

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 29 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V

|Id| ⓘ - Maximum Drain Current: 48 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 76.8 nS

Cossⓘ - Output Capacitance: 509 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.009 Ohm

Package: PRPAK3X3

HSBB2627 substitution

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HSBB2627 datasheet

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 hsbb2627.pdf pdf_icon

HSBB2627

HSBB2627 Description Product Summary VDS -20 V The HSBB2627 is the high cell density trenched P-ch MOSFETs, which provide excellent RDS(ON),max 9 m RDSON and gate charge for most of the synchronous buck converter applications. ID -48 A The HSBB2627 meet the RoHS and Green Product requirement with full function reliability approved. l Super Low Gate Charge PRPAK3x3 ... See More ⇒

 ..2. Size:535K  huashuo
 hsbb2627.pdf pdf_icon

HSBB2627

HSBB2627 Description Product Summary VDS -20 V The HSBB2627 is the high cell density trenched P-ch MOSFETs, which provide excellent RDS(ON),max 9 m RDSON and gate charge for most of the synchronous buck converter applications. ID -48 A The HSBB2627 meet the RoHS and Green Product requirement with full function reliability approved. l Super Low Gate Charge PRPAK3x3 ... See More ⇒

Detailed specifications: HSBA6040, HSBA6048, HSBA6066, HSBA8024A, HSBA8048, HSBA8066, HSBB0012, HSBB02P15, 7N65, HSBB3002, HSBB3004, HSBB3016, HSBB3052, HSBB3054, HSBB3056, HSBB3058, HSBB3060

Keywords - HSBB2627 MOSFET specs

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