All MOSFET. HSBB2627 Datasheet

 

 

HSBB2627 Datasheet and Replacement


   Type Designator: HSBB2627
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 29 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
   |Id| ⓘ - Maximum Drain Current: 48 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 76.8 nS
   Cossⓘ - Output Capacitance: 509 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.009 Ohm
   Package: PRPAK3X3
 

 HSBB2627 substitution

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HSBB2627 Datasheet (PDF)

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HSBB2627

HSBB2627 Description Product Summary VDS -20 V The HSBB2627 is the high cell density trenched P-ch MOSFETs, which provide excellent RDS(ON),max 9 m RDSON and gate charge for most of the synchronous buck converter applications. ID -48 A The HSBB2627 meet the RoHS and Green Product requirement with full function reliability approved. l Super Low Gate Charge PRPAK3x3

 ..2. Size:535K  huashuo
 hsbb2627.pdf pdf_icon

HSBB2627

HSBB2627 Description Product Summary VDS -20 V The HSBB2627 is the high cell density trenched P-ch MOSFETs, which provide excellent RDS(ON),max 9 m RDSON and gate charge for most of the synchronous buck converter applications. ID -48 A The HSBB2627 meet the RoHS and Green Product requirement with full function reliability approved. l Super Low Gate Charge PRPAK3x3

Datasheet: HSBA6040 , HSBA6048 , HSBA6066 , HSBA8024A , HSBA8048 , HSBA8066 , HSBB0012 , HSBB02P15 , 7N65 , HSBB3002 , HSBB3004 , HSBB3016 , HSBB3052 , HSBB3054 , HSBB3056 , HSBB3058 , HSBB3060 .

History: HSBB3002 | MMBT7002E

Keywords - HSBB2627 MOSFET datasheet

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