All MOSFET. HSBB2627 Datasheet

 

HSBB2627 MOSFET. Datasheet pdf. Equivalent


   Type Designator: HSBB2627
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 29 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1 V
   |Id|ⓘ - Maximum Drain Current: 48 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 63 nC
   trⓘ - Rise Time: 76.8 nS
   Cossⓘ - Output Capacitance: 509 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.009 Ohm
   Package: PRPAK3X3

 HSBB2627 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

HSBB2627 Datasheet (PDF)

 ..1. Size:535K  1
 hsbb2627.pdf

HSBB2627 HSBB2627

HSBB2627 Description Product Summary VDS -20 V The HSBB2627 is the high cell density trenched P-ch MOSFETs, which provide excellent RDS(ON),max 9 m RDSON and gate charge for most of the synchronous buck converter applications. ID -48 A The HSBB2627 meet the RoHS and Green Product requirement with full function reliability approved. l Super Low Gate Charge PRPAK3x3

 ..2. Size:535K  huashuo
 hsbb2627.pdf

HSBB2627 HSBB2627

HSBB2627 Description Product Summary VDS -20 V The HSBB2627 is the high cell density trenched P-ch MOSFETs, which provide excellent RDS(ON),max 9 m RDSON and gate charge for most of the synchronous buck converter applications. ID -48 A The HSBB2627 meet the RoHS and Green Product requirement with full function reliability approved. l Super Low Gate Charge PRPAK3x3

Datasheet: FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , RFP50N06 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .

History: 2N6800

 

 
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