All MOSFET. HSBB8008 Datasheet

 

HSBB8008 Datasheet and Replacement


   Type Designator: HSBB8008
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 31 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Id| ⓘ - Maximum Drain Current: 50 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 46 nS
   Cossⓘ - Output Capacitance: 405 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0049 Ohm
   Package: PRPAK3X3
 

 HSBB8008 substitution

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HSBB8008 Datasheet (PDF)

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HSBB8008

HSBB8008 N-Ch 30V Fast Switching MOSFETs Description Product Summary The HSBB8008 is the high cell density trenched N-VDS 30 V ch MOSFETs, which provide excellent RDSON and gate charge for most of the synchronous buck RDS(ON),typ 4.2 m converter applications. ID 50 A The HSBB8008 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function reliab

 ..2. Size:870K  huashuo
 hsbb8008.pdf pdf_icon

HSBB8008

HSBB8008 N-Ch 30V Fast Switching MOSFETs Description Product Summary The HSBB8008 is the high cell density trenched N-VDS 30 V ch MOSFETs, which provide excellent RDSON and gate charge for most of the synchronous buck RDS(ON),typ 4.2 m converter applications. ID 50 A The HSBB8008 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function reliab

Datasheet: HSBB3214 , HSBB4016 , HSBB4052 , HSBB4062 , HSBB4115 , HSBB6056 , HSBB6066 , HSBB6115 , 4435 , HSBE2730 , HSBE2738 , HSBF3202 , HSBG2024 , HSBG2103 , HSCA2030 , HSCB1216 , HSCB2012 .

Keywords - HSBB8008 MOSFET datasheet

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