HSBB8008 Specs and Replacement

Type Designator: HSBB8008

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 31 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V

|Id| ⓘ - Maximum Drain Current: 50 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 46 nS

Cossⓘ - Output Capacitance: 405 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0049 Ohm

Package: PRPAK3X3

HSBB8008 substitution

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HSBB8008 datasheet

 ..1. Size:870K  1
 hsbb8008.pdf pdf_icon

HSBB8008

HSBB8008 N-Ch 30V Fast Switching MOSFETs Description Product Summary The HSBB8008 is the high cell density trenched N- VDS 30 V ch MOSFETs, which provide excellent RDSON and gate charge for most of the synchronous buck RDS(ON),typ 4.2 m converter applications. ID 50 A The HSBB8008 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function reliab... See More ⇒

 ..2. Size:870K  huashuo
 hsbb8008.pdf pdf_icon

HSBB8008

HSBB8008 N-Ch 30V Fast Switching MOSFETs Description Product Summary The HSBB8008 is the high cell density trenched N- VDS 30 V ch MOSFETs, which provide excellent RDSON and gate charge for most of the synchronous buck RDS(ON),typ 4.2 m converter applications. ID 50 A The HSBB8008 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function reliab... See More ⇒

Detailed specifications: HSBB3214, HSBB4016, HSBB4052, HSBB4062, HSBB4115, HSBB6056, HSBB6066, HSBB6115, 5N65, HSBE2730, HSBE2738, HSBF3202, HSBG2024, HSBG2103, HSCA2030, HSCB1216, HSCB2012

Keywords - HSBB8008 MOSFET specs

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