HSBF3202 Specs and Replacement

Type Designator: HSBF3202

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 20.8 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 28 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 9.8 nS

Cossⓘ - Output Capacitance: 81 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.018 Ohm

Package: PRPAK3X3A

HSBF3202 substitution

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HSBF3202 datasheet

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 hsbf3202.pdf pdf_icon

HSBF3202

HSBF3202 Dual N-Ch 30V Fast Switching MOSFETs Description Product Summary The HSBF3202 is the high cell density trenched N- V 30 V DS ch MOSFETs, which provide excellent RDSON and gate charge for most of the synchronous buck R 18 m DS(ON),max converter applications. I 28 A D The HSBF3202 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full fun... See More ⇒

 ..2. Size:268K  huashuo
 hsbf3202.pdf pdf_icon

HSBF3202

HSBF3202 Dual N-Ch 30V Fast Switching MOSFETs Description Product Summary The HSBF3202 is the high cell density trenched N- V 30 V DS ch MOSFETs, which provide excellent RDSON and gate charge for most of the synchronous buck R 18 m DS(ON),max converter applications. I 28 A D The HSBF3202 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full fun... See More ⇒

Detailed specifications: HSBB4062, HSBB4115, HSBB6056, HSBB6066, HSBB6115, HSBB8008, HSBE2730, HSBE2738, AON6380, HSBG2024, HSBG2103, HSCA2030, HSCB1216, HSCB2012, HSCB2016, HSCB20D03, HSCB2307

Keywords - HSBF3202 MOSFET specs

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