All MOSFET. HSBG2024 Datasheet

 

HSBG2024 Datasheet and Replacement


   Type Designator: HSBG2024
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 0.7 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
   |Id| ⓘ - Maximum Drain Current: 1.4 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 24 nS
   Cossⓘ - Output Capacitance: 9 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.23 Ohm
   Package: DFN1006
 

 HSBG2024 substitution

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HSBG2024 Datasheet (PDF)

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HSBG2024

HSBG2024 N-Ch 20V Fast Switching MOSFETs Product Summary Description The HSBG2024 is the high cell density trenched VDS 20 V N-ch MOSFETs, which provides excellent RDSON and efficiency for most of the small RDS(ON),typ 190 m power switching and load switch applications. ID 1.4 A The HSBG2024 meets the RoHS and Green Product requirement with full function reliability

 9.1. Size:669K  huashuo
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HSBG2024

HSBG2103 P-Ch 20V Fast Switching MOSFETs Description Product Summary The HSBG2103 is the high cell density trenched P-V -20 V DSch MOSFETs, which provide excellent RDSON and gate charge for most of the synchronous buck R 350 m DS(ON),typconverter applications. I -0.65 A DThe HSBG2103 meet the RoHS and Green Product requirement with full function reliability approved.

Datasheet: HSBB4115 , HSBB6056 , HSBB6066 , HSBB6115 , HSBB8008 , HSBE2730 , HSBE2738 , HSBF3202 , AO4407 , HSBG2103 , HSCA2030 , HSCB1216 , HSCB2012 , HSCB2016 , HSCB20D03 , HSCB2307 , HSCB3010 .

History: STB300NH02L | NCEP11N10AQU | WMP16N70SR | WMQ119N10LG2 | STB24N60DM2 | HSBB4052 | IRFR4104

Keywords - HSBG2024 MOSFET datasheet

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