HSBG2024 Specs and Replacement

Type Designator: HSBG2024

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.7 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V

|Id| ⓘ - Maximum Drain Current: 1.4 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 24 nS

Cossⓘ - Output Capacitance: 9 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.23 Ohm

Package: DFN1006

HSBG2024 substitution

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HSBG2024 datasheet

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 hsbg2024.pdf pdf_icon

HSBG2024

HSBG2024 N-Ch 20V Fast Switching MOSFETs Product Summary Description The HSBG2024 is the high cell density trenched VDS 20 V N-ch MOSFETs, which provides excellent RDSON and efficiency for most of the small RDS(ON),typ 190 m power switching and load switch applications. ID 1.4 A The HSBG2024 meets the RoHS and Green Product requirement with full function reliability ... See More ⇒

 9.1. Size:669K  huashuo
 hsbg2103.pdf pdf_icon

HSBG2024

HSBG2103 P-Ch 20V Fast Switching MOSFETs Description Product Summary The HSBG2103 is the high cell density trenched P- V -20 V DS ch MOSFETs, which provide excellent RDSON and gate charge for most of the synchronous buck R 350 m DS(ON),typ converter applications. I -0.65 A D The HSBG2103 meet the RoHS and Green Product requirement with full function reliability approved.... See More ⇒

Detailed specifications: HSBB4115, HSBB6056, HSBB6066, HSBB6115, HSBB8008, HSBE2730, HSBE2738, HSBF3202, IRF530, HSBG2103, HSCA2030, HSCB1216, HSCB2012, HSCB2016, HSCB20D03, HSCB2307, HSCB3010

Keywords - HSBG2024 MOSFET specs

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