HSBG2103 Specs and Replacement

Type Designator: HSBG2103

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.15 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V

|Id| ⓘ - Maximum Drain Current: 0.65 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 6 nS

Cossⓘ - Output Capacitance: 20 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.52 Ohm

Package: DFN1006

HSBG2103 substitution

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HSBG2103 datasheet

 ..1. Size:669K  huashuo
 hsbg2103.pdf pdf_icon

HSBG2103

HSBG2103 P-Ch 20V Fast Switching MOSFETs Description Product Summary The HSBG2103 is the high cell density trenched P- V -20 V DS ch MOSFETs, which provide excellent RDSON and gate charge for most of the synchronous buck R 350 m DS(ON),typ converter applications. I -0.65 A D The HSBG2103 meet the RoHS and Green Product requirement with full function reliability approved.... See More ⇒

 9.1. Size:1176K  huashuo
 hsbg2024.pdf pdf_icon

HSBG2103

HSBG2024 N-Ch 20V Fast Switching MOSFETs Product Summary Description The HSBG2024 is the high cell density trenched VDS 20 V N-ch MOSFETs, which provides excellent RDSON and efficiency for most of the small RDS(ON),typ 190 m power switching and load switch applications. ID 1.4 A The HSBG2024 meets the RoHS and Green Product requirement with full function reliability ... See More ⇒

Detailed specifications: HSBB6056, HSBB6066, HSBB6115, HSBB8008, HSBE2730, HSBE2738, HSBF3202, HSBG2024, CS150N03A8, HSCA2030, HSCB1216, HSCB2012, HSCB2016, HSCB20D03, HSCB2307, HSCB3010, HSCC2734

Keywords - HSBG2103 MOSFET specs

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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.