All MOSFET. HSBG2103 Datasheet

 

HSBG2103 Datasheet and Replacement


   Type Designator: HSBG2103
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 0.15 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V
   |Id| ⓘ - Maximum Drain Current: 0.65 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 6 nS
   Cossⓘ - Output Capacitance: 20 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.52 Ohm
   Package: DFN1006
 

 HSBG2103 substitution

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HSBG2103 Datasheet (PDF)

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HSBG2103

HSBG2103 P-Ch 20V Fast Switching MOSFETs Description Product Summary The HSBG2103 is the high cell density trenched P-V -20 V DSch MOSFETs, which provide excellent RDSON and gate charge for most of the synchronous buck R 350 m DS(ON),typconverter applications. I -0.65 A DThe HSBG2103 meet the RoHS and Green Product requirement with full function reliability approved.

 9.1. Size:1176K  huashuo
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HSBG2103

HSBG2024 N-Ch 20V Fast Switching MOSFETs Product Summary Description The HSBG2024 is the high cell density trenched VDS 20 V N-ch MOSFETs, which provides excellent RDSON and efficiency for most of the small RDS(ON),typ 190 m power switching and load switch applications. ID 1.4 A The HSBG2024 meets the RoHS and Green Product requirement with full function reliability

Datasheet: HSBB6056 , HSBB6066 , HSBB6115 , HSBB8008 , HSBE2730 , HSBE2738 , HSBF3202 , HSBG2024 , IRLB4132 , HSCA2030 , HSCB1216 , HSCB2012 , HSCB2016 , HSCB20D03 , HSCB2307 , HSCB3010 , HSCC2734 .

History: WMQ15DN04TS | NCE20ND07U

Keywords - HSBG2103 MOSFET datasheet

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