HSCA2030 Datasheet and Replacement
Type Designator: HSCA2030
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 3.6 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
|Id| ⓘ - Maximum Drain Current: 19 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 41 nS
Cossⓘ - Output Capacitance: 380 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0058 Ohm
Package: DFN3X3
HSCA2030 substitution
HSCA2030 Datasheet (PDF)
hsca2030.pdf

HSCA2030 Dual N-Ch Fast Switching MOSFETs Product Summary General Description VDS 20 V The HSCA2030 is the highest performance trench N-ch MOSFETs with extreme high cell density , RDS(ON),max 5.8 m which provide excellent RDSON and gate charge for most of the small power switching and load ID 56 A switch applications. The HSCA2030 meet the RoHS and Green Product requ
Datasheet: HSBB6066 , HSBB6115 , HSBB8008 , HSBE2730 , HSBE2738 , HSBF3202 , HSBG2024 , HSBG2103 , IRFP450 , HSCB1216 , HSCB2012 , HSCB2016 , HSCB20D03 , HSCB2307 , HSCB3010 , HSCC2734 , HSCC8204 .
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