All MOSFET. HSCA2030 Datasheet

 

HSCA2030 MOSFET. Datasheet pdf. Equivalent


   Type Designator: HSCA2030
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 3.6 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1 V
   |Id|ⓘ - Maximum Drain Current: 19 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 38 nC
   trⓘ - Rise Time: 41 nS
   Cossⓘ - Output Capacitance: 380 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0058 Ohm
   Package: DFN3X3

 HSCA2030 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

HSCA2030 Datasheet (PDF)

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 hsca2030.pdf

HSCA2030 HSCA2030

HSCA2030 Dual N-Ch Fast Switching MOSFETs Product Summary General Description VDS 20 V The HSCA2030 is the highest performance trench N-ch MOSFETs with extreme high cell density , RDS(ON),max 5.8 m which provide excellent RDSON and gate charge for most of the small power switching and load ID 56 A switch applications. The HSCA2030 meet the RoHS and Green Product requ

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