HSCA2030 Specs and Replacement

Type Designator: HSCA2030

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 3.6 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V

|Id| ⓘ - Maximum Drain Current: 19 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 41 nS

Cossⓘ - Output Capacitance: 380 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0058 Ohm

Package: DFN3X3

HSCA2030 substitution

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HSCA2030 datasheet

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HSCA2030

HSCA2030 Dual N-Ch Fast Switching MOSFETs Product Summary General Description VDS 20 V The HSCA2030 is the highest performance trench N-ch MOSFETs with extreme high cell density , RDS(ON),max 5.8 m which provide excellent RDSON and gate charge for most of the small power switching and load ID 56 A switch applications. The HSCA2030 meet the RoHS and Green Product requ... See More ⇒

Detailed specifications: HSBB6066, HSBB6115, HSBB8008, HSBE2730, HSBE2738, HSBF3202, HSBG2024, HSBG2103, NCEP15T14, HSCB1216, HSCB2012, HSCB2016, HSCB20D03, HSCB2307, HSCB3010, HSCC2734, HSCC8204

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