HSCB1216 Specs and Replacement

Type Designator: HSCB1216

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 3.5 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 12 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V

|Id| ⓘ - Maximum Drain Current: 16 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 31 nS

Cossⓘ - Output Capacitance: 390 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.015 Ohm

Package: DFN2X2-6L

HSCB1216 substitution

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HSCB1216 datasheet

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HSCB1216

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Detailed specifications: HSBB6115, HSBB8008, HSBE2730, HSBE2738, HSBF3202, HSBG2024, HSBG2103, HSCA2030, AON7506, HSCB2012, HSCB2016, HSCB20D03, HSCB2307, HSCB3010, HSCC2734, HSCC8204, HSCC8211

Keywords - HSCB1216 MOSFET specs

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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs