All MOSFET. HSCB1216 Datasheet

 

HSCB1216 Datasheet and Replacement


   Type Designator: HSCB1216
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 3.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 12 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Id| ⓘ - Maximum Drain Current: 16 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 31 nS
   Cossⓘ - Output Capacitance: 390 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.015 Ohm
   Package: DFN2X2-6L
 

 HSCB1216 substitution

   - MOSFET ⓘ Cross-Reference Search

 

HSCB1216 Datasheet (PDF)

 ..1. Size:1079K  huashuo
 hscb1216.pdf pdf_icon

HSCB1216

HSCB1216 P-Ch 12V Fast Switching MOSFETs Description Product Summary The HSCB1216 is the high cell density trenched P-VDS -12 V ch MOSFETs, which provide excellent RDSON and gate charge for most of the synchronous buck RDS(ON),typ 13 m converter applications. ID -16 A The HSCB1216 meet the RoHS and Green Product requirement with full function reliability approved.

Datasheet: HSBB6115 , HSBB8008 , HSBE2730 , HSBE2738 , HSBF3202 , HSBG2024 , HSBG2103 , HSCA2030 , IRFP250 , HSCB2012 , HSCB2016 , HSCB20D03 , HSCB2307 , HSCB3010 , HSCC2734 , HSCC8204 , HSCC8211 .

History: STU16N65M2

Keywords - HSCB1216 MOSFET datasheet

 HSCB1216 cross reference
 HSCB1216 equivalent finder
 HSCB1216 lookup
 HSCB1216 substitution
 HSCB1216 replacement

 

 
Back to Top

 


 
.