HSCB1216 Datasheet and Replacement
Type Designator: HSCB1216
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pd ⓘ - Maximum Power Dissipation: 3.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 12 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Id| ⓘ - Maximum Drain Current: 16 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 31 nS
Cossⓘ - Output Capacitance: 390 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.015 Ohm
Package: DFN2X2-6L
HSCB1216 substitution
HSCB1216 Datasheet (PDF)
hscb1216.pdf

HSCB1216 P-Ch 12V Fast Switching MOSFETs Description Product Summary The HSCB1216 is the high cell density trenched P-VDS -12 V ch MOSFETs, which provide excellent RDSON and gate charge for most of the synchronous buck RDS(ON),typ 13 m converter applications. ID -16 A The HSCB1216 meet the RoHS and Green Product requirement with full function reliability approved.
Datasheet: HSBB6115 , HSBB8008 , HSBE2730 , HSBE2738 , HSBF3202 , HSBG2024 , HSBG2103 , HSCA2030 , IRFP250 , HSCB2012 , HSCB2016 , HSCB20D03 , HSCB2307 , HSCB3010 , HSCC2734 , HSCC8204 , HSCC8211 .
History: STU1HN60K3 | ME4565AD4-G | MTN2510J3
Keywords - HSCB1216 MOSFET datasheet
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History: STU1HN60K3 | ME4565AD4-G | MTN2510J3



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