HSCB3010 Specs and Replacement

Type Designator: HSCB3010

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 6.2 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 20 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 6 nS

Cossⓘ - Output Capacitance: 140 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.01 Ohm

Package: DFN2X2-6L

HSCB3010 substitution

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HSCB3010 datasheet

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HSCB3010

HSCB3010 N-Ch 30V Fast Switching MOSFETs Description Product Summary The HSCB3010 is the high cell density trenched N- VDS 30 V ch MOSFETs, which provide excellent RDSON and RDS(ON),typ 7.5 m gate charge for most of the synchronous buck converter applications. ID 20 A The HSCB3010 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function rel... See More ⇒

Detailed specifications: HSBG2024, HSBG2103, HSCA2030, HSCB1216, HSCB2012, HSCB2016, HSCB20D03, HSCB2307, BS170, HSCC2734, HSCC8204, HSCC8211, HSCC8233, HSCE2530, HSCE2631, HSCE6032, HSCS2050

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