All MOSFET. HSCB3010 Datasheet

 

HSCB3010 Datasheet and Replacement


   Type Designator: HSCB3010
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 6.2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 20 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 6 nS
   Cossⓘ - Output Capacitance: 140 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.01 Ohm
   Package: DFN2X2-6L
 

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HSCB3010 Datasheet (PDF)

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HSCB3010

HSCB3010 N-Ch 30V Fast Switching MOSFETs Description Product Summary The HSCB3010 is the high cell density trenched N-VDS 30 V ch MOSFETs, which provide excellent RDSON and RDS(ON),typ 7.5 m gate charge for most of the synchronous buck converter applications. ID 20 A The HSCB3010 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function rel

Datasheet: HSBG2024 , HSBG2103 , HSCA2030 , HSCB1216 , HSCB2012 , HSCB2016 , HSCB20D03 , HSCB2307 , 18N50 , HSCC2734 , HSCC8204 , HSCC8211 , HSCC8233 , HSCE2530 , HSCE2631 , HSCE6032 , HSCS2050 .

History: SMM2348ES | WMS175N10LG4

Keywords - HSCB3010 MOSFET datasheet

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